BS250
P-CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR
Features
·
·
·
·
High Input Impedance
Fast Switching Speed
CMOS Logic Compatible Input
No Thermal Runaway or Secondary Breakdown
E
A
B
TO-92
Dim
A
B
Min
4.45
4.46
12.7
0.41
3.43
2.42
1.14
Max
4.70
4.70
—
0.63
3.68
2.67
1.40
Mechanical Data
·
·
·
·
Case: TO-92, Plastic
Leads: Solderable per MIL-STD-202,
Method 208
Pin Connection: See Diagram
Approx Weight: 0.18 grams
C
C
D
E
G
H
D
BOTTOM
VIEW
SG D
All Dimensions in mm
H
G
H
Maximum Ratings
Drain-Source Voltage
Drain-Gate Voltage
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
–V
DSS
–V
DGS
V
GS
–I
D
P
d
T
j,
T
STG
Value
60
60
±20
250
830
-55 +150
Unit
V
V
V
mA
mW
°C
Gate-Source-Voltage (pulsed)
Drain Current (continuous)
Power Dissipation @T
C
= 25°C (Note 1)
Operating and Storage Temperature Range
Inverse Diode
@ T
A
= 25°C unless otherwise specified
Characteristic
Symbol
I
F
V
F
Value
0.15
0.85
Unit
A
V
Maximum Forward Current (continuous)
Forward Voltage Drop (Typ.) @ V
GS
= 0, I
F
= 0.15A, T
j
= 25°C
Electrical Characteristics
Characteristic
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Gate-Body Leakage Current
Drain-Source Cutoff Current
Drain-Source ON Resistance
@ T
A
= 25°C unless otherwise specified
Symbol
-V
(BR)DSS
-V
GS(th)
-I
GSS
-I
DSS
r
DS (ON)
R
qJA
g
FS
C
iss
t
on
t
off
Min
60
—
—
—
—
—
—
—
—
—
Typ
70
1.0
—
—
3.5
—
150
60
5
25
Max
—
3.0
20
0.5
5.0
150
—
—
—
—
Unit
V
V
nA
µA
W
K/W
mS
pF
ns
Test Condition
I
D
= 100µA, V
GS
= 0
V
GS
= V
DS
, –I
D
= 1.0mA
-V
GS
= 15V, V
DS
= 0
-V
DS
= 25V, V
GS
= 0
-V
GS
= 10V, –I
D
= 0.2A
Note 1
-V
DS
= 10V, –I
D
= 0.2A,
f = 1.0MHz
-V
DS
= 10V, V
GS
= 0,
f = 1.0MHz
-V
GS
= 10V, –V
DS
= 10V,
R
D
= 100W
Thermal Resistance, Junction to Ambient Air
Forward Transconductance
Input Capacitance
Switching Times
Turn On Time
Turn Off Time
Notes:
1. Valid provided that leads are kept at ambient temperature at a distance of 2mm from case.
DS21902 Rev. D-3
1 of 2
BS250
-I
D,
(ON) DRAIN SOURCE ON CURRENT (A)
1
500
7V
6V
-V
GS
= 5.5V
T
A
= 25°C
P
d
, POWER DISSIPATION (W)
0.8
(See Note 1)
400
Pulse test width 80µs;
pulse duty factor 1%
0.6
300
5.0V
0.4
200
4.5V
4.0V
0.2
100
3.0V
0
0
100
T
A
, AMBIENT TEMPERATURE (ºC)
Fig. 1, Power Derating Curve
200
0
0
20
40
60
80
100
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 2, Output Characteristics
-I
D,
(ON) DRAIN SOURCE ON-CURRENT (mA)
500
T
A
= 25°C
1.0
-V
DS
= 10V
T
A
= 25°C
400
-I
D,
DRAIN CURRENT (A)
Pulse test width 80µs;
pulse duty factor 1%
0.8
Pulse test width 80µs;
pulse duty factor 1%
300
-V
GS
= 5V
0.6
200
4.5V
0.4
4.0V
100
3.5V
3.0V
0.2
0
0
2
4
6
0
8
10
0
2
4
6
8
10
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 3, Saturation Characteristics
-V
GS
, DRAIN-SOURCE VOLTAGE (V)
Fig. 4, Drain Current vs Gate-Source Voltage
g
fs
, FORWARD TRANSCONDUCTANCE (mm)
g
f s
, FORWARD TRANSCONDUCTANCE (mm)
500
-V
DS
= 10V
Pulse test width 80µs;
pulse duty factor 1%
500
-V
DS
= 10V
400
400
Pulse test width 80µs;
pulse duty factor 1%
300
300
200
200
100
100
0
0
2
4
6
8
10
0
0
100
200
300
400
500
V
GS
, GATE-SOURCE VOLTAGE (V)
Fig. 5, Transconductance vs Gate-Source Voltage
I
D
, DRAIN CURRENT, (mA)
Fig. 6, Transconductance vs. Drain Current
DS21902 Rev. D-3
2 of 2
BS250
Motor Drive Control（Motor Control）
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