2SB766
Elektronische Bauelemente
RoHS Compliant Product
D
D1
A
PNP Silicon
Medium Power Transistor
SOT-89
E1
FEATURES
Power dissipation
P
CM
: 500mW Tamb=25
1.BASE
Collector current
2.COLLECTOR
A
I
CM
: -1
3.EMITTER
Collector-base voltage
V
V
B(BR)CBO
: -30
Operating and storage junction temperature range
T
J
T
stg
: -55 to +150
b1
b
L
E
e
e1
C
Dimensions In Millimeters
Symbol
A
b
b1
c
D
D1
E
E1
e
e1
L
2.900
0.900
Min
1.400
0.320
0.360
0.350
4.400
1.400
2.300
3.940
1.500TYP
3.100
1.100
Max
1.600
0.520
0.560
0.440
4.600
1.800
2.600
4.250
Min
Dimensions In Inches
Max
0.063
0.020
0.022
0.017
0.181
0.071
0.102
0.167
0.060TYP
0.114
0.035
0.122
0.043
0.055
0.013
0.014
0.014
0.173
0.055
0.091
0.155
ELECTRICAL CHARACTERISTICS
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Tamb=25
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
h
FE(1)
unlessotherwise
Test
conditions
specified
MIN
TYP
MAX
UNIT
V
V
V
Ic=
-10
A, I
E
=0
Ic=
-2
mA, I
B
=0
I
E
=
-10
A, I
C
=0
V
CB
=
-20
V, I
E
=0
V
EB
=
-4
V, I
C
=0
V
CE
=
-10
V, I
C
=
-500
mA
V
CE
=
-5
V, I
C
=
-1
A
I
C
=
-500
mA, I
B
=
-50
mA
I
C
=
-500
mA, I
B
=
-50
mA
V
CE
=
-10
V, I
C
=
-50
mA, f=200MHz
V
CB
=
-10
V, I
E
=0, f=
1
MHz
-30
-25
-5
-0.1
-0.1
85
50
-0.2
-0.85
A
A
340
DC current gain
h
FE(2)
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
V
CE(sat)
V
BE(sat)
-0.4
-1.2
V
V
MHz
f
T
C
ob
200
20
30
pF
CLASSIFICATION OF h
FE(1)
Rank
Range
Marking
Q
85-170
AQ
R
120-240
AR
S
170-340
AS
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
1
of
2
2SB766
Elektronische Bauelemente
PNP Silicon
Medium Power Transistor
P
C
⎯
T
a
1.4
−1.50
I
C
⎯
V
CE
T
a
=
25°C
I
B
= −10
mA
−9
mA
−8
mA
−7
mA
−6
mA
−5
mA
−4
mA
−3
mA
−2
mA
−1
mA
V
CE(sat)
⎯
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−100
I
C
/ I
B
=
10
Collector power dissipation P
C
(W)
1.2
1.0
0.8
0.6
0.4
0.2
0
Copper plate at the collector
is more than 1 cm
2
in area,
1.7 mm in thickness
−1.25
Collector current I
C
(A)
−10
−1.00
−
0.75
−1
T
a
=
75°C
25°C
−25°C
−
0.50
−
0.1
−
0.25
0
20
40
60
80 100 120 140 160
0
0
−2
−4
−6
−8
−10
−
0.01
−
0.01
−
0.1
−1
−10
Ambient temperature T
a
(
°C
)
Collector-emitter voltage V
CE
(V)
Collector current I
C
(A)
V
BE(sat)
⎯
I
C
−100
h
FE
⎯
I
C
600
V
CE
= −10
V
200
V
CB
= −10
V
T
a
=
25°C
f
T
⎯
I
E
Base-emitter saturation voltage V
BE(sat)
(V)
I
C
/ I
B
=
10
Forward current transfer ratio h
FE
Transition frequency f
T
(MHz)
−1
−10
500
−10
160
400
T
a
=
75°C
300
25°C
200
−25°C
25°C
−1
120
T
a
= −25°C
75°C
80
−
0.1
100
40
−
0.01
−
0.01
−
0.1
−1
−10
0
−
0.01
−
0.1
0
1
10
100
Collector current I
C
(A)
Collector current I
C
(A)
Emitter current I
E
(mA)
C
ob
⎯
V
CB
Collector output capacitance
C (pF)
(Common base, input open circuited)
ob
50
I
E
=
0
f
=
1 MHz
T
a
=
25°C
−10
Safe operation area
Single pulse
T
a
=
25°C
I
CP
40
Collector current I
C
(A)
−1
I
C
t
=
1s
t
=
10 ms
30
−
0.1
20
−
0.01
10
0
−1
−10
−100
−
0.001
−
0.01
−
0.1
−1
−10
Collector-base voltage V
CB
(V)
Collector-emitter voltage V
CE
(V)
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page
2
of
2
Embedded System
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