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2SK1720TE24R

Description
TRANSISTOR 45 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size98KB,2 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

2SK1720TE24R Overview

TRANSISTOR 45 A, 60 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

2SK1720TE24R Parametric

Parameter NameAttribute value
package instructionSMALL OUTLINE, R-PSSO-G2
Reach Compliance Codeunknow
ECCN codeEAR99
Shell connectionDRAIN
ConfigurationSINGLE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)45 A
Maximum drain-source on-resistance0.03 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum power consumption environment100 W
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
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