2SD667A-B-C datasheet, PDF - EEWORLD Datasheet

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2SD667A-B-C: DescriptionTransistor; CategoryDiscrete semiconductor The transistor; File Size508KB，3 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/; Environmental Compliance

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2SD667A-B-C Overview

Transistor

2SD667A-B-C Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Reach Compliance Code	compli
Maximum collector current (IC)	1 A
Configuration	Single
Minimum DC current gain (hFE)	60
Maximum operating temperature	150 °C
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.9 W
surface mount	NO
Base Number Matches	1

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2SD667A

Elektronische Bauelemente

1A , 120V

NPN Plastic Encapsulated Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURES



TO-92MOD

A

D

Low Frequency Power Amplifier

Complementary Pair with 2SB647A

B

K

E

C

CLASSIFICATION OF h

FE (1)

Product-Rank

Range

2SD667A-B

60~120

2SD667A-C

100~200

2SD667A-D

160~320

F

N

G

H

M



Emitter



Collector



Base

Collector

L

REF.

J

Millimeter

Min.

Max.

1.70

2.05

2.70

3.20

0.85

1.15

1.60 Max

0.00

0.40

4.00 Min



A

B

C

D

E

F

G

Millimeter

Min.

Max.

5.50

6.50

8.00

9.00

12.70

14.50

4.50

5.30

0.35

0.65

0.30

0.51

1.50 TYP.

REF.

H

J

K

L

M

N



Base



Emitter

ABSOLUTE MAXIMUM RATINGS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Junction, Storage Temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

T

J

, T

STG

Rating

120

100

5

1

0.9

150, -55~150

Unit

V

A

W

°C

ELECTRICAL CHARACTERISTICS

(T

A

=25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Base to Emitter Voltage

Transition Frequency

Collector Output Capacitance

Symbol

V

(BR)CBO

V

(BR)CEO

V

(BR)EBO

I

CBO

I

EBO

h

FE (1)

h

FE (2)

V

CE(sat)

V

BE

f

T

C

ob

Min.

120

100

5

-

60

30

-

Typ.

-

140

12

Max.

-

10

320

-

1

1.5

-

Unit

V

μA

Test Conditions

I

C

=10μA, I

E

=0

I

C

=1mA, I

B

=0

I

E

=10μA, I

C

=0

V

CB

=100V, I

E

=0

V

EB

=4V, I

C

=0

V

CE

=5V, I

C

=150mA

V

CE

=5V, I

C

=500mA

I

C

=500mA, I

B

=50mA

V

CE

=5V, I

C

=150mA

V

CE

=5V, I

C

=150mA

V

CB

=10V, I

E

=0, f=1MHz

V

MHz

pF

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

17-Sep-2013 Rev. B

Page 1 of 3

2SD667A-B-C Related Products

	2SD667A-B-C	2SD667A-C	2SD667A-D
Description	Transistor	Transistor	Transistor
Is it Rohs certified?	conform to	conform to	conform to
Reach Compliance Code	compli	compli	compliant
Maximum collector current (IC)	1 A	1 A	1 A
Configuration	Single	Single	Single
Minimum DC current gain (hFE)	60	100	160
Maximum operating temperature	150 °C	150 °C	150 °C
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.9 W	0.9 W	0.9 W
surface mount	NO	NO	NO
Base Number Matches	1	1	1

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Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

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