JMnic
Product Specification
Silicon PNP Power Transistors
2N6594
DESCRIPTION
・With
TO-3 package
・Complement
to type 2N6569
・Wide
area of safe operation
APPLICATIONS
・Designed
for low voltage amplifier
power switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
DESCRIPTION
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
E
I
EM
P
C
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Emitter current
Emitter current-peak
Collector power dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
-45
-40
-5
-12
-24
-5
-17
-34
100
200
-65~200
UNIT
V
V
V
A
A
A
A
A
W
℃
℃
JMnic
Product Specification
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
I
CEO
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=-0.1A ;I
B
=0
I
C
=-4A; I
B
=-0.4A
I
C
=-12A; I
B
=-2.4A
I
C
=-4A; I
B
=-0.4A
V
CE
=-40V; I
B
=0
V
CB
=-45V; I
E
=0
V
EB
=-5V; I
C
=0
I
C
=-4A ; V
CE
=-3V
I
C
=-12A ; V
CE
=-4V
I
C
=-1.0A ; V
CE
=-4V;f=0.5MHz
15
5
1.5
MIN
-40
TYP.
2N6594
MAX
UNIT
V
-1.5
-4.0
-2.0
-1.0
-1.0
-5.0
200
100
20
V
V
V
mA
mA
mA
MHz
Switching times
t
d
t
r
t
stg
t
f
Delay time
Rise time
Storage time
Fall time
I
C
=-2A; I
B1
=-I
B2
=-0.2A
V
CC
=-30V; t
p
=25μs;
Duty Cycle≤2.0%
0.4
1.5
5.0
1.5
μs
μs
μs
μs
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.75
UNIT
℃/W
2
JMnic
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
2N6594
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
京公网安备 11010802033920号
EEWORLD
