JMnic
Product Specification
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low
saturation voltage
・Fast
switching speed
・High
voltage ratings
APPLICATIONS
・Off-line
power supplies
・High-voltage
inverters
・Switching
regulators
PINNING
PIN
1
2
3
Base
Emitter
DESCRIPTION
2N6671 2N6672 2N6673
Fig.1 simplified outline (TO-3) and symbol
Collector
Absolute maximum ratings(Ta=
℃)
SYMBOL
PARAMETER
2N6671
V
CBO
Collector-base voltage
2N6672
2N6673
2N6671
V
CEO
Collector-emitter voltage
2N6672
2N6673
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
Open collector
Open base
Open emitter
CONDITIONS
VALUE
450
550
650
300
350
400
8
8
10
4
150
200
-65~200
V
A
A
A
W
℃
℃
V
V
UNIT
JMnic
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
2N6671
V
CEO(SUS)
Collector-emitter
sustaining voltage
2N6672
2N6673
V
CEsat-1
V
CEsat-2
V
BEsat
Collector-emitter saturation voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
2N6671
I
CEV
Collector cut-off current
2N6672
2N6673
I
EBO
h
FE
C
OB
f
T
Emitter cut-off current
DC current gain
Output capacitance
Transition frequency
I
C
=5A; I
B
=1A
I
C
=8A ;I
B
=4A
I
C
=5A; I
B
=1A
I
C
=0.2A ;I
B
=0
CONDITIONS
2N6671 2N6672 2N6673
MIN
300
350
400
TYP.
MAX
UNIT
V
1.0
2.0
1.6
V
V
V
V
CE
=450V; V
BE(off)
=-1.5V
V
CE
=550V; V
BE(off)
=-1.5V
V
CE
=650V; V
BE(off)
=-1.5V
V
EB
=8V; I
C
=0
I
C
=5A ; V
CE
=3V
I
E
=0 ; V
CB
=10V;f=0.1MHz
I
C
=0.2A ; V
CE
=10V
15
10
2.0
40
300
60
pF
MHz
mA
0.1
mA
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.17
UNIT
℃/W
2