Product Specification
www.jmnic.com
Silicon NPN Power Transistors
DESCRIPTION
・With
TO-3 package
・Low-collector
emitter saturation voltage
APPLICATIONS
・Designed
for general-purpose power
amplifier and switching applications
PINNING
PIN
1
2
3
Base
Emitter
Collector
DESCRIPTION
2N5972
Fig.1 simplified outline (TO-3) and symbol
Absolute maximum ratings(Ta=
℃)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
P
D
T
j
T
stg
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current-peak
Base current
Total Power Dissipation
Junction temperature
Storage temperature
T
C
=25℃
CONDITIONS
Open emitter
Open base
Open collector
VALUE
100
80
5
15
30
5
150
150
-65~200
UNIT
V
V
V
A
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
R
th j-c
PARAMETER
Thermal resistance junction to case
VALUE
1.1
UNIT
℃/W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2N5972
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V
CEO(SUS)
V
CEsat-1
V
CEsat-2
V
BEsat
I
CEO
I
CEV
I
CBO
I
EBO
h
FE-1
h
FE-2
f
T
PARAMETER
Collector-emitter sustioning voltage
Collector-emitter saturation voltge
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
DC current gain
DC current gain
Transition frequency
CONDITIONS
I
C
=0.1A ;I
B
=0
I
C
=7A ;I
B
=0.7A
I
C
=15A; I
B
=3.75A
I
C
=15A; I
B
=3.75A
V
CE
=40V; I
B
=0
V
CE
=100V; V
BE(off)
=1.5V
T
C
=150℃
V
CB
=100V; I
E
=0
V
EB
=5V; I
C
=0
I
C
=5A ; V
CE
=1.5V
I
C
=15A ; V
CE
=4V
I
C
=1A;V
CE
=10V
25
4
4
MHz
MIN
80
1.0
4.0
2.5
1.0
0.5
5.0
0.5
1.0
75
TYP.
MAX
UNIT
V
V
V
V
mA
mA
mA
mA
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2N5972
Fig.2 outline dimensions (unindicated tolerance:±0.10mm)
JMnic
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