2N5973_15 datasheet, PDF - EEWORLD Datasheet

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2N5973_15: DescriptionSilicon NPN Power Transistors; File Size38KB，3 Pages; ManufacturerQuanzhou Jinmei Electronic Co.,Ltd.; Websitehttp://www.jmnic.com/

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2N5973_15 Overview

Silicon NPN Power Transistors

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Product Specification

www.jmnic.com

Silicon NPN Power Transistors

DESCRIPTION

・With

TO-3 package

・Low

collector-emitter saturation voltage

APPLICATIONS

・Designed

for general-purpose power

amplifier and switching applications

PINNING

Base

Emitter

Collector

DESCRIPTION

2N5973

Fig.1 simplified outline (TO-3) and symbol

Absolute maximum ratings(Ta=

℃)

SYMBOL

CBO

CEO

EBO

stg

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current-peak

Base current

Total Power Dissipation

Junction temperature

Storage temperature

=25℃

CONDITIONS

Open emitter

Open base

Open collector

VALUE

120

100

150

-65~200

UNIT

℃

THERMAL CHARACTERISTICS

SYMBOL

th j-c

PARAMETER

Thermal resistance junction to case

VALUE

1.1

UNIT

℃/W

JMnic

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