EEWORLDEEWORLDEEWORLD

Part Number

Search

ERA32-01

Description
1 A, 100 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size161KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
Download Datasheet Compare View All

ERA32-01 Overview

1 A, 100 V, SILICON, SIGNAL DIODE

ERA32-01/ERA32-02
High Efficiency Rectifier
VOLTAGE RANGE: 100 --- 200 V
CURRENT: 1.0 A
DO - 41
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC DO--41,molded plastic
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERA32 - 01
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
ERA32 - 02
200
140
200
1.0
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
40.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.92
5.0
50.0
50
20
60
- 55 ----- + 150
- 55 ----- + 150
V
ns
pF
/W
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn

ERA32-01 Related Products

ERA32-01 ERA32-02
Description 1 A, 100 V, SILICON, SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE
IAR version problem, which version supports 9B96 C3 development board?
IAR version problem, which version supports 9B96 C3 development board? Please give me a link, urgent, waiting online!...
wzp2007 Microcontroller MCU
Hercules Basics
[color=rgb(82,82,82)][b]What is Hercules?[/b][align=left]Hercules safety microprocessors are hardware that builds on TI's more than 20 years of expertise, industry collaboration and proven performance...
anvy178 Microcontroller MCU
Please advise...................
I'm debugging the NRF24L01 wireless module recently, but the data I receive and send are all high level. What's going on? ? ? Also, the voltage I give to the wireless module is divided from 5V by two ...
东海之涛 RF/Wirelessly
[EEWORLD takes you DIY] Oscilloscope V2.0 indicators are tentative~~~
Preliminary indicators have been determined. Sampling rate: single-channel 250M, dual-channel 125M (8bit) Bandwidth (1db): >50M (note, not 3db bandwidth, 3db deviation is too large) Input impedance: 1...
soso DIY/Open Source Hardware
About DDS IP core output frequency range
I would like to ask you, in Xilinx's DDS IP core, if there is no DAC for digital-to-analog conversion, will the frequency of the DDS output have multiple Nyquist zone images like DAC or ADC?...
eeleader FPGA/CPLD
Why does a NAND block need to be discarded if one page is damaged?
Reposted from [url]http://blog.sina.com.cn/s/blog_679f935601013zjx.html[/url]The above picture shows the internal structure of NAND. WL is a number of pages, and a group of (64) WLs is a block. From t...
白丁 FPGA/CPLD

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 949  420  2296  2849  2832  20  9  47  58  29 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号