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ERA32-02

Description
1 A, 200 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size161KB,2 Pages
ManufacturerLGE
Websitehttp://www.luguang.cn/web_en/index.html
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ERA32-02 Overview

1 A, 200 V, SILICON, SIGNAL DIODE

ERA32-01/ERA32-02
High Efficiency Rectifier
VOLTAGE RANGE: 100 --- 200 V
CURRENT: 1.0 A
DO - 41
Features
Low cost
Diffused junction
Low leakage
Low forward voltage drop
High current capability
Easily cleaned with alcohol,Isopropanol
and similar solvents
The plastic material carries U/L recognition 94V-0
Mechanical Data
Case:JEDEC DO--41,molded plastic
Polarity: Color band denotes cathode
Weight: 0.012 ounces,0.34 grams
Mounting position: Any
Dimensions in millimeters
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
ambient temperature unless otherwise specified.
Single phase,half wave,60 Hz,resistive or inductive load. For capacitive load,derate by 20%.
ERA32 - 01
Maximum recurrent peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forw ard rectified current
9.5mm lead length,
@T
A
=75
ERA32 - 02
200
140
200
1.0
UNITS
V
V
V
A
V
RRM
V
RMS
V
DC
I
F(AV)
100
70
100
Peak forw ard surge current
8.3ms single half-sine-w ave
superimposed on rated load
@T
J
=125
I
FSM
40.0
A
Maximum instantaneous forw ard voltage
@ 1.0A
Maximum reverse current
@T
A
=25
V
F
I
R
t
rr
C
J
R
θ
JA
T
J
T
STG
0.92
5.0
50.0
50
20
60
- 55 ----- + 150
- 55 ----- + 150
V
ns
pF
/W
at rated DC blocking voltage @T
A
=100
Maximum reverse recovery time
Typical junction capacitance
Typical thermal resistance
(Note1)
(Note2)
(Note3)
Operating junction temperature range
Storage temperature range
NOTE: 1. Measured with I
F
=0.5A, I
R
=1A, I
rr
=0.25A.
2. Measured at 1.0MH
Z
and applied rev erse v oltage of 4.0V DC.
3. Thermal resistance f rom junction to ambient.
http://www.luguang.cn
mail:lge@luguang.cn

ERA32-02 Related Products

ERA32-02 ERA32-01
Description 1 A, 200 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE

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