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BSM25GD120DN1

Description
Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel
CategoryDiscrete semiconductor    The transistor   
File Size50KB,1 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BSM25GD120DN1 Overview

Insulated Gate Bipolar Transistor, 25A I(C), 1200V V(BR)CES, N-Channel

BSM25GD120DN1 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionFLANGE MOUNT, R-PUFM-P17
Reach Compliance Codeunknown
Maximum collector current (IC)25 A
Collector-emitter maximum voltage1200 V
ConfigurationBRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE
JESD-30 codeR-PUFM-P17
Number of components6
Number of terminals17
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment300 W
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationUPPER
Transistor component materialsSILICON

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