FM120-M
DTC114TUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board
Features
Low power loss,space.efficiency.
high
•
.004(0.10)MIN.
•
•
•
High current
Pb-Free
•
package is
capability, low forward voltage drop.
available
•
High surge capability.
RoHS product for packing code suffix ”G”
•
Guardring for overvoltage protection.
Ultra high-speed
packing
Halogen
•
free product for
switching.
code suffix “H”
•
Silicon
94 V-0 flammability rating
Epoxy meets UL
epitaxial planar chip, metal silicon junction.
Moisure
•
Lead-free parts meet environmental standards of
Sensitivity Level 1
MIL-STD-19500 /228
Built-in bias resistors enable the configuration of an inverter circuit
RoHS product for packing code suffix "G"
•
without connecting external input resistors (see equivalent circuit)
Halogen free product for packing code suffix "H"
The bias resistors consist of thin-film resistors with complete
isolation
Mechanical data
of the input. They also have the
to allow negative biasing
•
of almost completely eliminating parasitic effects
advantage
Epoxy : UL94-V0 rated flame retardant
Only the
•
Case
conditions need to be set for operation, making
on/off
: Molded plastic, SOD-123H
,
device design easy
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.096(2.45)
.078(2.00)
0.031(0.8) Typ.
0.040(1.0)
0.024(0.6)
.010(0.25)
.003(0.08)
0.031(0.8) Typ.
Absolute Maximum Ratings
by cathode band
•
Polarity : Indicated
Parameter
Position : Any
Symbol
•
Mounting
Collector-Base Voltage
V
CBO
•
Weight : Approximated 0.011 gram
Value
Unit
50
Collector-Emitter Voltage
V
CEO
50
Emitter-Base voltage
V
EBO
5
MAXIMUM RATINGS AND ELECTRICAL
Collector Current-Continuous
I
C
100
Ratings at 25℃ ambient temperature unless otherwise specified.
Collector Dissipation
P
C
200
Single phase half wave, 60Hz, resistive of inductive load.
Junction Temperature
load, derate current by 20%
T
J
150
For capacitive
Storage Temperature Range
Marking Code
Dimensions in inches
.087(2.20)
and (millimeters)
V
V
V
CHARACTERISTICS
mA
mW
RATINGS
T
STG
-55~150
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
.056(1.40)
Electrical Characteristics
Reverse Voltage
Maximum Recurrent Peak
Sym
Parameter
Maximum RMS Voltage
28
35
42
56
70
105
140
Collector-Base Breakdown Voltage
50
---
V
(BR)CBO
Maximum DC Blocking Voltage
40
50
60
80
100
150
200
V
DC
(I
C
=50uA, I
E
=0)
.004(0.10)MAX.
Collector-Emitter Breakdown Voltage
Maximum Average Forward Rectified Current
I
O
---
1.0
50
---
V
V
(BR)CEO
(I
C
=1mA, I
B
=0)
Peak
Emitter-Base Breakdown
ms single half sine-wave
Forward Surge Current 8.3
Voltage
5
---
---
V
V
(BR)EBO
30
I
FSM
(I
E
=50uA, I
C
=0)
.016(0.40)
superimposed on rated load (JEDEC method)
Collector Cut-off Current
---
---
0.5
uA
I
CBO
(V
Thermal
E
=0)
40
.008(0.20)
Typical
CB
=50V, I
Resistance (Note 2)
R
ΘJA
Emitter Cut-off Current
120
C
J
---
I
EBO
Typical Junction Capacitance (Note 1)
---
0.5
uA
(V
EB
=4V, I
C
=0)
-55 to +125
-55 to +150
Operating Temperature Range
T
J
DC Current Gain
Dimensions in inches and (millimeters)
100
TSTG
300
600
---
h
FE
Storage Temperature Range
-
65
to +175
(V
CE
=5V, I
C
=1mA)
Collector-Emitter Saturation Voltage
---
---
0.3
V
V
CE(sat)
(I
C
=10mA, I
B
=1mA)
Suggested Solder
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
CHARACTERISTICS
SYMBOL
R
1
Input Resistor
7
10
13
K
0.9
Maximum Forward Voltage at 1.0A DC
0.92
V
F
0.50
0.70
Pad Layout
0.85
Transition Frequency
---
250
---
MHz
f
T
Maximum Average Reverse Current at @T A=25℃
0.70
0.5
(V
CE
=10V, I
E
=-5mA, f=100MHz)
I
R
10
@T A=125℃
Rated DC Blocking Voltage
Min
V
RMS
Typ
V
RRM
12
20
14
---
20
Max
13
30
21
V
30
Unit
14
40
15
50
.047(1.20)
16
18
60
80
.054(1.35)
.045(1.15)
.070(1.80)
10
100
115
150
120
200
*Marking: 04
0.90
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
1.90 mm
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
.043(1.10)
.032(0.80)
FM120-M
DTC114TUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
•
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
12
20
14
20
13
30
21
30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
I
R
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
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