FM120-M
DTC114YCA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
WILLAS
PACKAGE
Pb Free Produc
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
•
.063(1.60)
.047(1.20)
Features
ry
0.031(0.8) Typ.
•
•
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Pb-Free package is available
•
Guardring for overvoltage protection.
RoHS
•
product for packing code suffix ”G”
Ultra high-speed switching.
•
Silicon epitaxial
for packing code suffix “H”
Halogen free product
planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
Epitaxial Planar Die Construction
MIL-STD-19500 /228
Complementary NPN Types Available
RoHS product for packing code suffix "G"
•
Built-In Biasing Resistors
Halogen free product for packing code suffix "H"
SOT-23
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
.122(3.10)
.106(2.70)
0.071(1.8)
0.056(1.4)
Absolute
•
maximum ratings @ 25
band
Polarity : Indicated by cathode
Method 2026
im
i
12
Max
20
---
14
1.4
20
0.3
0.88
0.5
---
13
5.7
---
Symbol
Parameter
Min
Typ
Max
Unit
Mounting Position : Any
•
Collector current
---
100
I
C
---
mA
V
IN
Input voltage
-6
---
+40
V
•
Weight : Approximated 0.011 gram
P
d
Power dissipation
---
200
---
mW
T
j
Junction temperature
---
150
---
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
T
stg
Storage temperature
-55
---
150
Ratings at 25℃ ambient temperature unless otherwise specified.
na
13
Unit
30
V
21
V
30
V
mA
A
K
Dimensions in inches and (millimeters)
.006(0.15)MIN.
Epoxy meets UL 94 V-0 flammability rating
Mechanical data
Moisure Sensitivity Level 1
•
Epoxy
Marking: 64
: UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
.080(2.04)
.070(1.78)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Pr
el
RATINGS
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.008(0.20)
.003(0.08)
Electrical Characteristics @ 25
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Symbol
Parameter
Min
Typ
Maximum Recurrent Peak Reverse Voltage
V
RRM
0.3
---
V
I(off)
Input voltage (V
CC
=5V, I
O
=100 A)
Maximum RMS Voltage
(V
O
=0.3V, I
O
=1mA)
V
RMS
---
---
V
I(on)
V
Maximum
Output voltage (I
O
=5mA,I
i
=0.25mA)
---
V
DC
---
O(on)
DC Blocking Voltage
I
I
Input current (V
I
=5V)
---
---
Maximum Average Forward Rectified Current
I
O(off)
Output current (V
CC
=50V, V
I
=0)
---
I
O
---
G
I
DC current gain (V
O
=5V, I
O
=5mA)
68
---
Peak Forward Surge Current 8.3 ms single half sine-wave
R
1
Input resistance
7
I
FSM
10
superimposed on rated load (JEDEC method)
R
2
/R
1
Resistance ratio
3.7
4.7
Typical Thermal Resistance (Note 2)
R
ΘJA
Transition frequency
---
250
f
T
(V
O
=10V, I
O
=5mA, f=100MHz)
Typical Junction Capacitance (Note 1)
C
J
Operating Temperature Range
Storage Temperature Range
14
40
28
40
15
16
50
60
.004(0.10)MAX.
35
42
50
60
1.0
30
18
80
56
80
.020(0.50)
.012(0.30)
10
100
70
100
.083(2.10)
.110(2.80)
115
150
105
.055(1.40)
.035(0.89)
120
200
140
200
150
MHz
T
J
TSTG
-55 to +125
Dimensions in inches
and (millimeters)
40
120
-55 to +150
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Suggested Solder
V
F
I
R
0.50
0.70
0.5
0.85
Pad Layout
0.9
0.92
@T A=125℃
.031
.800
10
.035
.900
.079
2.000
inches
mm
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
.037
.950
.037
.950
2012-06
WILLAS ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
51mcu
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