FM120-M
DTC123JUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
Epitaxial Planar Die Construction
•
Guardring for overvoltage protection.
Complementary NPN Types Available
•
Ultra high-speed switching.
Built-in
•
Bias Resistors
planar chip, metal silicon junction.
Silicon epitaxial
Pb-Free
Lead-free parts
available
•
package is
meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix ”G”
RoHS product for packing code suffix "G"
•
Halogen free product for packing code suffix “H”
Halogen free product for packing code suffix "H"
SOD-123H
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
•
•
•
•
.004(0.10)MIN.
Features
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
•
•
Absolute maximum ratings @ 25
Epoxy meets UL 94 V-0 flammability rating
Mechanical data
Moisure Sensitivity Level 1
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
0.031(0.8) Typ.
.010(0.25)
.003(0.08)
.096(2.45)
.078(2.00)
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
Method 2026
Symbol
Parameter
Min
Typ
Max
Unit
.087(2.20)
Dimensions in inches and (millimeters)
•
Supply voltage
Polarity : Indicated by cathode band
---
V
CC
50
---
V
.070(1.80)
V
IN
-5
---
+12
V
Mounting Position : Any
•
Input voltage
P
d
Power dissipation
---
200
---
mW
•
Junction temperature
Weight : Approximated 0.011 gram
T
j
---
150
---
T
stg
Storage temperature
-55
---
150
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
I
O
100
Output current
mA
I
C(MAX)
100
Ratings at 25℃ ambient temperature unless otherwise specified.
RATINGS
Electrical Characteristics @ 25
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
.056(1.40)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Symbol
Parameter
Min
Typ
Maximum Recurrent Peak Reverse
=100 A)
Voltage
0.5
V
RRM
---
V
I(off)
Input voltage (V
CC
=5V, I
O
---
V
RMS
---
V
I(on)
Maximum RMS Voltage
(V
O
=0.3V, I
O
=5mA)
V
O(on)
Output voltage (I
O
=5mA,I
i
=0.25mA)
---
0.1
Maximum DC Blocking Voltage
V
DC
I
I
Input current (V
I
=5V)
---
---
Maximum Average Forward Rectified
I
Current
I
O(off)
Output current (V
CC
=50V, V =0)
---
I
O
---
G
I
DC current gain (V
O
=5V, I
O
=10mA)
80
---
Peak
R
1
Forward Surge Current 8.3 ms single half sine-wave
Input resistance
1.54
I
FSM
2.2
R
2
superimposed on rated
ratio
(JEDEC method)
/R
1
Resistance
load
17
21
Transition frequency
Typical Thermal Resistance (Note 2)
f
T
---
R
ΘJA
250
(V
o
=10V, I
o
=5mA, f=100MHz)
Typical Junction Capacitance (Note 1)
C
J
Operating Temperature Range
Storage Temperature Range
K
---
MHz
T
J
TSTG
-55 to +125
40
120
.016(0.40)
.008(0.20)
-55 to +150
Dimensions in inches and (millimeters)
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Rated DC Blocking Voltage
*Marking: E42
I
R
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
0.50
0.70
Suggested Solder
Pad Layout
0.70
.043(1.10)
.032(0.80)
12
Max
20
---
14
1.1
0.3
20
3.6
0.5
---
2.86
26
13
Unit
30
V
21
V
V
30
mA
A
14
40
28
40
15
50
35
.047(1.20)
16
18
60
80
.054(1.35)
.045(1.15)
10
100
70
100
115
150
105
150
120
200
140
200
42
56
80
50
60
.004(0.10)MAX.
1.0
30
0.85
0.9
0.92
Maximum Average Reverse Current at @T A=25℃
@T A=125℃
0.5
10
1.90
mm
0.90
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
0.65
0.65
2012-06
2012-
0
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
FM120-M
DTC123JUA
THRU
NPN Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
design, excellent
•
Batch process
ON Characteristics
power dissipation offers
better reverse leakage current and thermal
=0.3V
V
O
resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
standards of
•
Lead-free parts meet environmental
℃
T
a
=25
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
℃
T
a
=100
Halogen free product for packing code suffix "H"
WILLAS
Features
Typical Characteristics
outline
Package
OFF Characteristics
10
SOD-123
PACKAGE
Pb Free Produc
100
SOD-123H
V
CC
=5V
30
3
(V)
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
V
I(ON)
10
(mA)
I
0
1
INPUT VOLTAGE
OUTPUT CURRENT
3
0.3
T
a
=100
℃
T
a
=25
℃
0.071(1.8)
0.056(1.4)
1
0.1
0.3
Mechanical data
0.03
0.040(1.0)
0.024(0.6)
•
Epoxy : UL94-V0 rated flame retardant
0.1
0.3
0.1
Case : Molded
1
plastic,
3
10
100
30
SOD-123H
•
,
OUTPUT
terminals,
(mA)
•
Terminals :Plated
CURRENT I
solderable per MIL-STD-750
O
0.01
0.2
0.4
0.031(0.8) Typ.
0.6
0.8
1.0
0.031(0.8) Typ.
INPUT VOLTAGE
V
I(OFF)
(V)
Method 2026
1000
•
Polarity : Indicated by cathode band
V
O(ON)
—— I
O
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
G
I
I
O
/I
I
=20
1000
——
I
O
V
O
=5V
(mV)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
300
300
OUTPUT VOLTAGE
100
RATINGS
Marking Code
Maximum RMS Voltage
30
Maximum DC Blocking Voltage
T
a
=100
℃
T
a
=25
℃
30
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
I
FSM
R
ΘJA
C
J
100
12
20
14
20
DC CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
T
a
=100
℃
G
I
100
V
O(ON)
T
a
=25
℃
13
30
10
21
30
3
14
40
28
40
15
50
35
50
16
60
42
60
1.0
3
30
40
120
P
D
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
1
10
30
3
OUTPUT CURRENT
superimposed on rated load (JEDEC method)
I
O
(mA)
10
1
0.1
10
30
100
0.3
1
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
O
C
10
Storage Temperature Range
OUTPUT CURRENT
I
O
(mA)
-55 to +125
400
-55 to +150
——
V
R
T
J
TSTG
f=1MHz
T
a
=25
℃
—— T
a
-
65
to +175
CHARACTERISTICS
(pF)
8
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
(mW)
350
V
F
@T A=125℃
C
O
Maximum Average Reverse Current at @T A=25℃
OUTPUT CAPACITANCE
300
0.50
0.70
0.5
10
0.85
0.9
0.92
Rated DC Blocking Voltage
6
P
D
POWER DISSIPATION
I
R
250
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
4
200
DTC123JUA
150
100
2
50
0
0
4
8
12
16
20
0
0
25
50
75
100
125
150
2012-
0
2012-06
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
T
a
(
℃
)
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