WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low
device isa spin–off of our popular
The
M
MBT3906DW1T1
forward voltage drop.
•
High surge capability.
SOT–23/SOT–323 three–leaded device. It is designed for general
•
Guardring for overvoltage protection.
purpose amplifier applications and is housed in the SOT–363
•
Ultra high-speed switching.
six–leaded surface mount package. By putting two discrete devices in
•
Silicon epitaxial planar chip, metal silicon junction.
one package, this device is ideal for low–power surface mount
•
Lead-free parts meet environmental standards of
applications where board space is at a premium.
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
•
h
Halogen free product for packing code suffix "H"
FE, 100–300
Dual Bias Resistor
Transistor
200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V-
PACKAGE
FM120-M
MMBT3906DW1T1
THRU
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
6
5
4
0.056(1.4)
0.071(1.8)
1
2
•
Mechanical
0.4 V
Low VCE(sat),
≤
data
Design
•
•
Simplifies Circuit
rated flame retardant
Epoxy : UL94-V0
•
•
Reduces
Molded plastic, SOD-123H
Board Space
Case :
•
•
Reduces Component Count
solderable per MIL-STD-750 ,
Terminals :Plated terminals,
•
Available in
Method 2026
8 mm, 7–inch/3,000 Unit Tape and Reel
•
•
Device Marking:
MMBT3906DW1T1
= A2
Polarity : Indicated by cathode band
Weight :0.005g
: Any
•
•
Mounting Position
Featrues
•
RoHS product for packing code suffix "G",
Weight : Approximated 0.011 gram
SOT-363
0.040(1.0)
0.024(0.6)
3
0.031(0.8) Typ.
0.031(0.8) Typ.
(3)
(2)
(1)
Dimensions in inches and (millimeters)
Q
1
Q
2
Halogen free product
RATINGS AND
suffix "H".
MAXIMUM
for packing code
ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
(4)
(5)
(6)
MAXIMUM RATINGS
Rating
RATINGS
Marking Code
Symbol
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Collector–Emitter Voltage
Maximum Recurrent Peak Reverse Voltage
Collector–Base Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Emitter–Base Voltage
V
CEO
V
RRM
V
CBO
V
RMS
V
EBO
V
DC
I
C
I
O
Value
12
–40
20
–40
14
Unit
13
30
Vdc
21
Vdc
30
Vdc
14
40
28
40
15
50
35
16
60
20
–5.0
Maximum Average Forward Rectified Current
Collector Current – Continuous
superimposed on rated load (JEDEC method)
–200
mAdc
V
50
MMBT3906DW1T1
1.0
30
40
120
42
Device
60
ORDERING INFORMATION
56
70
Marking
100
80
18
80
10
100
115
150
120
200
140
V
A2
200
3000 Units/Reel
105
Shipping
150
V
V
A
Electrostatic
Current 8.3
ESD
Peak Forward Surge
Discharge
ms single half sine-wave
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
THERMAL CHARACTERISTICS
HBM>16000,
I
FSM
MM>2000
R
ΘJA
C
J
T
J
TSTG
A
-55 to +125
-55 to +150
℃
-
65
to +175
Characteristic
Total Package Dissipation
Maximum Forward Voltage at 1.0A DC
CHARACTERISTICS
Symbol
P
D
(1)
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
Max
150
833
Unit
R
Rated
Thermal Resistance Junction to
@T A=125℃
qJA
DC Blocking Voltage
TA = 25°C
Maximum Average Reverse Current at
Ambient
V
F
I
R
mW
0.50
0.70
0.5
10
0.85
0.9
0.92
V
@T A=25℃
°C/W
°C
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
Temperature Range
Junction and Storage
T
J
, T
stg
–55 to +150
2- Thermal Resistance From Junction to Ambient
1. Device mounted on FR4 glass epoxy printed circuit board using the minimum
1.
recommended footprint.
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
Dual Bias Resistor
Transistor
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
SOD-123
PACKAGE
WILLAS
FM120-M
MMBT3906DW1T1
THRU
FM1200-M
Pb Free Produc
Features
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Characteristic
Package outline
Symbol
Min
SOD-123H
Max
0.146(3.7)
–40
0.130(3.3)
Unit
OFF CHARACTERISTICS
optimize board space.
•
Low profile surface mounted application in order to
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
hFE
•
Low power loss, high efficiency.
Collector–Emitter Breakdown Voltage(2)
•
High current capability, low forward voltage drop.
Collector–Base Breakdown Voltage
•
High surge capability.
Emitter–Base Breakdown Voltage
protection.
•
Guardring for overvoltage
•
Ultra high-speed switching.
Base Cutoff Current
•
Silicon epitaxial planar chip, metal silicon junction.
Collector Cutoff Current
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
ON CHARACTERISTICS (2)
•
RoHS product for packing code suffix "G"
DC Current Gain
Halogen free product for packing code suffix "H"
(IC = –0.1 mAdc, VCE = –1.0 Vdc)
Mechanical
–1.0 Vdc)
(IC = –1.0 mAdc, VCE =
data
(IC =
Epoxy : UL94-V0
–1.0 Vdc)
•
–10 mAdc, VCE =
rated flame retardant
(IC = –50 mAdc, VCE = –1.0 Vdc)
•
–100
: Molded plastic,
Vdc)
(IC =
Case
mAdc, VCE = –1.0
SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Collector–Emitter Saturation Voltage
(IC = –10 mAdc, I
Method 2026
B = –1.0 mAdc)
(IC =
Polarity : Indicated by cathode band
–50 mAdc, IB = –5.0 mAdc)
•
Base–Emitter Saturation Voltage
•
Mounting Position : Any
(IC = –10 mAdc, IB = –1.0 mAdc)
•
Weight : Approximated 0.011 gram
(IC = –50 mAdc, IB = –5.0 mAdc)
–
–
–
–50
–50
Vdc
0.012(0.3) Typ.
–40
–5.0
–
–
Vdc
Vdc
0.071(1.8)
0.056(1.4)
nAdc
nAdc
0.031(0.8) Typ.
60
80
100
60
30
–
–
300
–
–
–
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
VCE(sat)
–
–0.25
–
–0.4
Dimensions in inches and (millimeters)
–0.65
–
–0.85
–0.95
Vdc
VBE(sat)
Vdc
SMALL–SIGNAL CHARACTERISTICS
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃
–
ambient temperature unless otherwise specified.
Current–Gain Bandwidth Product
Single phase half wave, 60Hz, resistive of inductive load.
Output Capacitance
For capacitive load, derate current by 20%
Input Capacitance
2. Pulse Test: Pulse Width
≤
300
µs;
Duty Cycle
≤2.0%.
Marking Code
Maximum Recurrent Peak Reverse Voltage
RATINGS
fT
Cobo
Cibo
250
–
–
–
4.5
10.0
MHz
pF
pF
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
12
13
14
20
30
40
V
RRM
unless
ELECTRICAL CHARACTERISTICS
(TA = 25°C
V
RMS
otherwise noted) (Continued)
14
21
28
Maximum RMS Voltage
Characteristic
V
DC
Maximum DC Blocking Voltage
20
30
40
15
50
16
60
18
80
56
10
100
70
Max
100
115
150
105
Unit
150
120
200
140
200
35
42
Symbol
60
50
Min
80
1.0
2.0
30
0.1
40
100
120
Input Impedance
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
I
O
I
FSM
R
ΘJA
C
J
T
J
TSTG
hie
hre
12
10
k
Ω
X 10–4
–
Typical Thermal Resistance (Note 2)
Operating Temperature Range
Voltage Feedback Ratio
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
Small–Signal Current Gain
Typical Junction Capacitance (Note 1)
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
-55 to +125
hfe
400
hoe
-
65
to
3.0
+175
Output Admittance
Storage Temperature Range
(VCE = –10 Vdc, IC = –1.0 mAdc, f = 1.0 kHz)
-55 to +150
60
mmhos
Noise Figure
NF
4.0
dB
FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH
–
(VCE = –5.0
Voltage at 1.0A DC
0.9
Maximum Forward
Vdc, IC = –100
mAdc,
RS = 1.0 k
Ω,
f =
F
kHz)
0.92
V
1.0
0.50
0.70
0.85
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
SWITCHING CHARACTERISTICS
Delay Time
(VCC = –3.0 Vdc, VBE = 0.5 Vdc)
(IC = –10 mAdc, IB1 = –1.0 mAdc)
(VCC = –3.0 Vdc, IC = –10 mAdc)
(IB1 = IB2 = –1.0 mAdc)
@T A=125℃
I
R
0.5
td
tr
ts
tf
10
–
–
–
–
35
35
225
75
NOTES:
Time
Rise
ns
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Storage Time
Fall Time
ns
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS
SOD-123
•
Batch process design, excellent power dissipation offers
Dual Bias Resistor
BARRIER RECTIFIERS -20V- 200V
1.0A SURFACE MOUNT SCHOTTKY
Transistor
PACKAGE
< 1 ns
FM120-M
MMBT3906DW1T1
THRU
FM1200-M
3V
Pb Free Produc
Features
3V
Package outline
+9.1 V
better reverse leakage current and thermal resistance.
275
275
SOD-123H
< 1 ns
surface mounted application in order to
•
Low profile
10
10 k
+0.5 V
optimize board space.
k
0
0.146(3.7)
•
Low power loss, high efficiency.
0.130(3.3)
0.012(0.3) Typ.
•
High current capability, low forward voltage
s
drop.
C < 4 pF*
Cs < 4 pF*
1N916
•
High surge capability.
10.6 V
300 ns
10 < t1 < 500
ms
•
Guardring for overvoltage protection.
10.9 V
t1
DUTY CYCLE = 2%
0.071(1.8)
•
Ultra high-speed switching.
DUTY CYCLE = 2%
0.056(1.4)
•
Silicon epitaxial planar chip, metal silicon junction.
* Total shunt capacitance of test jig and connectors
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
Figure 1. Delay and Rise Time
Figure 2. Storage and Fall Time
•
RoHS product for packing code suffix "G"
Equivalent Test Circuit
Equivalent Test Circuit
Halogen free product for packing code suffix "H"
Mechanical data
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
0.031(0.8) Typ.
TYPICAL TRANSIENT CHARACTERISTICS
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
10
7.0
CAPACITANCE (pF)
5.0
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
TJ = 25°C
TJ = 125°C
5000
3000
2000
Q, CHARGE (pC)
1000
700
500
300
200
13
30
100
70
21
50
30
VCC = 40 V
IC/IB = 10
Dimensions in inches and (millimeters)
MAXIMUM
C
RATINGS AND ELECTRICAL CHARACTERISTICS
obo
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz,
Cibo
resistive of inductive load.
3.0
For capacitive load, derate current by 20%
2.0
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
V
RRM
V
RMS
12
20
14
QT
14
40
28
15
50
35
16
60
42
18
80
56
10
QA
100
70
115
150
105
150
200
120
200
140
200
20
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
V
DC
30 40
20
Maximum Average Forward Rectified Current
I
O
REVERSE BIAS (VOLTS)
Figure 3. Capacitance
Peak Forward Surge Current 8.3 ms single half sine-wave
I
FSM
1.0
0.1
0.2 0.3
1.0
superimposed on rated load (JEDEC method)
40
2.0 3.0
50
5.0 7.0
60
10
20
80
30 50
100
100
70
1.0
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
30
40
120
Typical Thermal Resistance (Note 2)
500
R
ΘJA
C
B
IC/I
J
= 10
T
J
TSTG
Typical Junction Capacitance (Note 1)
500
-55
300
+125
to
200
300
Operating Temperature Range
200
Storage Temperature Range
t f , FALL TIME (ns)
-
65
to +175
= 20
IC/IB
0.70
0.5
10
IC/IB = 10
VCC = 40 V
-55 to
I
+150
B1 = IB2
TIME (ns)
100
CHARACTERISTICS
70
Maximum Forward Voltage at 1.0A DC
50
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
100
Maximum Average Reverse Current at @T A=25℃
V
F
tr @ VCC = 3.0 V
I
R
70
50
0.50
0.85
0.9
0.92
30
20
@T A=125℃
15 V
40 V
2.0 V
200
30
20
10
7
5
1.0
2.0 3.0
5.0 7.0 10
NOTES:
10
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to
td @ VOB = 0 V
Ambient
7
5
1.0
2.0 3.0
5.0 7.0 10
20
30
50 70 100
20
30
50 70 100
200
IC, COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn–On Time
Figure 6. Fall Time
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS
SOD-123
Dual Bias Resistor
Transistor
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PACKAGE
A
better reverse leakage current
CE
thermal resistance.
and
•
Low profile surface
= 200
W
application in order to
SOURCE RESISTANCE
mounted
optimize board space.
IC = 1.0 mA
•
Low power loss, high efficiency.
SOURCE RESISTANCE = 200
W
•
High current capability, low forward voltage drop.
capability.
•
High surge
IC = 0.5 mA
•
Guardring for overvoltage protection.
SOURCE RESISTANCE = 2.0 k
•
Ultra high-speed switching.
50
mA
IC =
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
SOURCE RESISTANCE = 2.0 k
IC
Halogen free product for packing code suffix "H"
= 100
mA
FM120-M
MMBT3906DW1T1
THRU
FM1200-M
•
Batch process design, excellent power dissipation
= 25°C, Bandwidth = 1.0 Hz)
(V
= –5.0 Vdc, T
offers
12
f = 1.0 kHz
10
8
6
4
2
0
0.1
0.2
Features
TYPICAL AUDIO SMALL–SIGNAL CHARACTERISTICS
Package outline
NOISE FIGURE VARIATIONS
SOD-123H
Pb Free Produc
5.0
4.0
3.0
2.0
1.0
IC = 1.0 mA
0.146(3.7)
0.130(3.3)
IC = 0.5 mA
0.012(0.3) Typ.
NF, NOISE FIGURE (dB)
NF, NOISE FIGURE (dB)
0.071(1.8)
0.056(1.4)
IC = 50
mA
IC = 100
mA
0.040(1.0)
0.024(0.6)
0
: UL94-V0 rated flame retardant
0.2
1.0 2.0 4.0
10
20
0.1
•
Epoxy
0.4
plastic, SOD-123H
•
Case : Molded
f, FREQUENCY (kHz)
Method 2026
Mechanical data
40
100
,
0.031(0.8) Typ.
0.4
20
1.0 2.0
4.0
10
Rg, SOURCE RESISTANCE (k OHMS)
40
100
0.031(0.8) Typ.
•
Terminals :Plated
Figure 7.
solderable per MIL-STD-750
terminals,
Figure 8.
Dimensions in inches and (millimeters)
300
•
Polarity : Indicated by cathode band
h PARAMETERS
•
Mounting Position : Any
(V
= –10 Vdc, f = 1.0 kHz, TA = 25°C)
•
Weight : Approximated 0.011 gram
CE
100
hoe, OUTPUT ADMITTANCE (
m
mhos)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
70
h fe , DC CURRENT GAIN
Ratings at 25℃ ambient temperature unless otherwise specified.
200
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
50
30
20
13
30
14
40
28
40
15
50
35
50
16
60
42
60
18
80
56
80
10
100
70
100
115
150
105
150
120
200
140
200
100
Marking Code
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Maximum Recurrent Peak Reverse Voltage
70
V
RRM
V
RMS
V
DC
I
O
12
20
14
20
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
50
21
10
30
7
0.1
0.2 0.3
0.5 0.7 1.0
2.0 3.0
Peak Forward Surge Current 8.3 ms single half sine-wave
IC,
(JEDEC method)
superimposed on rated load
COLLECTOR CURRENT (mA)
Typical Thermal Resistance (Note 2)
Figure 9. Current
Typical Junction Capacitance (Note 1)
30
5.0 7.0 10
I
FSM
R
ΘJA
T
J
TSTG
5
0.1
0.2
1.0
0.3
0.5 0.7 1.0
2.0 3.0
30
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Gain
h
re
, VOLTAGE FEEDBACK RATIO (x 10
-4
)
20
Operating Temperature Range
h ie , INPUT IMPEDANCE (k OHMS)
Storage Temperature Range
C
J
-55
10
+125
to
40
Figure 10. Output Admittance
120
-
65
to +175
-55 to +150
10
7.0
5.0
3.0
2.0
Maximum Forward Voltage at 1.0A DC
7.0
5.0
CHARACTERISTICS
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
3.0
Maximum Average Reverse Current at @T A=25℃
2.0
Rated DC Blocking Voltage
I
R
NOTES:
1.0
0.7
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
0.5
2- Thermal Resistance From Junction to Ambient
0.3
0.2
1.0
0.7
0.5
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
0.1
0.2
0.3
0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
5.0 7.0 10
Figure 11. Input Impedance
Figure 12. Voltage Feedback Ratio
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
WILLAS
SOD-123
TYPICAL STATIC CHARACTERISTICS
•
Batch process design, excellent power dissipation offers
h FE, DC CURRENT GAIN (NORMALIZED)
2.0
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
TJ = +125°C
optimize board space.
•
Low power loss, high efficiency.
+25°C
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
-55°C
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
Dual Bias Resistor
Transistor
-20V- 200V
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS
PACKAGE
FM120-M
MMBT3906DW1T1
THRU
FM1200-M
Pb Free Product
Features
Package outline
SOD-123H
1.0
0.7
0.5
0.3
0.2
0.146(3.7)
0.130(3.3)
VCE = 1.0 V
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Mechanical data
0.1
flame retardant
•
0.1
Epoxy : UL94-V0 rated
0.5 0.7
0.2
0.3
1.0
•
Case : Molded plastic, SOD-123H
2.0
3.0
5.0 7.0 10
20
IC, COLLECTOR CURRENT (mA)
0.031(0.8) Typ.
,
Terminals :Plated terminals, solderable per MIL-STD-750
Current Gain
Figure 13. DC
Method 2026
30
50
70
100
0.040(1.0)
0.024(0.6)
200
0.031(0.8) Typ.
•
VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)
1.0
0.8
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
IC = 1.0 mA
10 mA
30 mA
Dimensions in inches and (millimeters)
TJ = 25°C
100 mA
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.6
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For
0.4
capacitive load, derate current by 20%
RATINGS
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
0.2
V
RRM
V
RMS
12
20
14
13
30
21
14
40
28
15
50
35
50
1.0
16
60
42
60
2.0
1.0
30
40
120
18
80
56
80
3.0
10
100
70
100
7.0
5.0
115
150
105
150
10
120
200
140
200
0
Maximum DC Blocking Voltage
0.01
0.02
0.03
0.05
0.07
0.1
V
DC
I
O
Maximum Average Forward Rectified Current
20
0.3
30
0.5
40
0.7
0.2
IB, BASE CURRENT (mA)
Figure
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
14. Collector Saturation Region
I
FSM
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
T = 25°C
Storage Temperature Range
R
ΘJA
q
V , TEMPERATURE COEFFICIENTS (mV/
°
C)
1.0
-55 to +125
0.5
0
q
VC FOR VCE(sat)
0.50
0.70
1.0
0.8
C
J
TSTG
-55 to +150
J
VBE(sat) @ IC/IB = 10
T
J
V, VOLTAGE (VOLTS)
CHARACTERISTICS
VBE @ VCE = 1.0 V
V
F
-
65
to +175
+25°C TO +125°C
0.85
-55°C TO +25°C
0.9
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
Maximum Forward Voltage at 1.0A DC
0.6
Rated DC Blocking Voltage
Maximum Average Reverse Current at @T A=25℃
0.4
@T A=125℃
I
R
-0.5
-1.0
-1.5
-2.0
0
20
q
VB FOR VBE(sat)
40
0.5
10
+25°C TO +125°C
-55°C TO +25°C
NOTES:
VCE(sat)
of
IC/I
VDC.
1- Measured at 1 MHZ and applied reverse voltage
@
4.0
B = 10
0.2
2- Thermal Resistance From Junction to Ambient
0
1.0
2.0
50
5.0
10
20
IC, COLLECTOR CURRENT (mA)
100
200
60
80 100 120 140
IC, COLLECTOR CURRENT (mA)
160
180 200
Figure 15. “ON” Voltages
Figure 16. Temperature Coefficients
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC CORP
Embedded System
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