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BSP327E6327

Description
Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size222KB,9 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

BSP327E6327 Overview

Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BSP327E6327 Parametric

Parameter NameAttribute value
MakerSIEMENS
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas)45 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)1.7 A
Maximum drain-source on-resistance0.31 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)6.8 A
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

BSP327E6327 Related Products

BSP327E6327
Description Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Maker SIEMENS
package instruction SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown
ECCN code EAR99
Other features LOGIC LEVEL COMPATIBLE
Avalanche Energy Efficiency Rating (Eas) 45 mJ
Shell connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V
Maximum drain current (ID) 1.7 A
Maximum drain-source on-resistance 0.31 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G4
Number of components 1
Number of terminals 4
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Polarity/channel type N-CHANNEL
Maximum pulsed drain current (IDM) 6.8 A
Certification status Not Qualified
surface mount YES
Terminal form GULL WING
Terminal location DUAL
transistor applications SWITCHING
Transistor component materials SILICON
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