FM120-M
DTA114EUA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
•
Batch process design, excellent power dissipation offers
WILLAS
PACKAGE
Pb Free Produ
Features
Package outline
SOD-123H
.004(0.10)MIN.
•
Features
•
•
isolation to allow negative biasing of the input. They also have the
Mechanical data
advantage of almost completely eliminating parasitic effects.
•
Epoxy : UL94-V0 rated flame retardant
Only the on/off conditions need to be set for operation, making
device
•
Case :
easy
plastic, SOD-123H
design
Molded
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.031(0.8) Typ.
0.024(0.6)
.010(0.25)
.003(0.08)
.096(2.45)
.078(2.00)
0.040(1.0)
0.031(0.8) Typ.
•
•
•
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
Pb-Free package is available
forward voltage drop.
•
High current capability, low
RoHS
•
High surge capability.
code suffix ”G”
product for packing
•
Guardring for overvoltage protection.
Halogen free product for packing code suffix “H”
•
Ultra high-speed switching.
Epoxy meets UL 94 V-0 flammability rating
•
Silicon epitaxial planar chip, metal silicon junction.
Moisure
Lead-free parts meet environmental standards of
•
Sensitivity Level 1
Built-in bias resistors enable the configuration of an inverter circuit
MIL-STD-19500 /228
without
•
connecting external input resistors
RoHS product for packing code suffix "G"
The bias
Halogen free
consist
for
thin-film resistors with complete
resistors
product
of
packing code suffix "H"
SOT-323
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Symbol
Parameter
Min
Typ
Max
Unit
Mounting Position : Any
•
Supply voltage
V
CC
---
-50
---
V
V
IN
-40
---
10
V
•
Input voltage
Weight : Approximated 0.011 gram
-50
I
O
Output current
---
---
mA
I
C(MAX)
-100
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
P
d
Power dissipation
---
200
---
mW
Ratings at 25℃ ambient temperature unless otherwise specified.
---
T
j
Junction temperature
---
150
T
Single phase half wave, 60Hz, resistive of inductive load.
---
Storage temperature
-55
stg
For capacitive load, derate current by 20%
RATINGS
Marking Code
150
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-M
.056(1.40)
Maximum Recurrent Peak Reverse
Electrical Characteristics @
Voltage
25
V
RRM
12
20
13
30
14
40
15
50
35
.047(1.20)
16
18
60
80
.054(1.35)
.045(1.15)
Absolute
•
maximum ratings @ 25
band
Polarity : Indicated by cathode
Dimensions in inches and (millimeters)
.087(2.20)
.070(1.80)
10
100
70
100
115
150
105
150
120
200
140
200
14
21
28
Maximum RMS Voltage
V
RMS
Symbol
Parameter
Min
Typ
Max
Unit
Maximum
Input voltage
Voltage
DC Blocking
(V
CC
=-5V, I
O
=-100A)
30
V
40
V
V
I(off)
-0.5
DC
---
20
---
-3.0
---
I
O
---
V
V
I(on)
(V
O
Rectified Current
Maximum Average Forward
=-0.3V, I
O
=-10mA)
V
O(on)
Output voltage (I
O
/I
I
=-10mA/-0.5mA
---
---
-0.3
V
I
I
Input current (V
I
=-5V)
---
-0.88
mA
Peak Forward Surge Current 8.3 ms single half sine-wave
---
I
FSM
---
A
I
O(off)
Output current (V
CC
=-50V, V
I
=0)
---
-0.5
superimposed on rated load (JEDEC method)
G
I
DC current gain (V
O
=-5V, I
O
=-5mA)
30
---
---
Typical Thermal
resistance
(Note 2)
R
R
1
Input
Resistance
7.0
ΘJA
10
13
K¡
Typical Junction Capacitance (Note 1)
C
J
1.0
R
2
/R
1
Resistance ratio
0.8
1.2
-55 to +125
Transition frequency
Operating Temperature Range
f
T
---
T
J
250
---
MHz
(V
O
=-10V, I
O
=5mA, f=100MHz)
Storage Temperature Range
TSTG
42
56
80
40
120
.016(0.40)
.008(0.20)
Dimensions
to +175
and (millimeters)
in inches
-
65
-55 to +150
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-M
.043(1.10)
.032(0.80)
50
60
.004(0.10)MAX.
1.0
30
V
F
0.50
Suggested
0.70
0.70
10
0.90
Maximum Average Reverse Current at @T A=25℃
I
R
MARKING:
@T A=125℃
14
Rated DC Blocking Voltage
Solder
0.85
Pad Layout
0.5
0.9
0.92
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
1.90
mm
0.65
0.65
2012-
0
2012-06
WILLAS ELECTRONIC CORP.
WILLAS ELECTRONIC COR
FM120-M
DTA114EUA
THRU
PNP Digital Transistor
FM1200-M
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
design, excellent
•
Batch process
ON Characteristics
power dissipation offers
WILLAS
Features
Package
Typical Characteristics
outline
-10
SOD-123
PACKAGE
Pb Free Produc
-100
-30
V
I(ON)
-10
-3
-1
better reverse leakage current and thermal resistance.
V
O
=-0.3V
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
T
a
=25
℃
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
T
a
=100
℃
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
OFF Characteristics
SOD-123H
-3
0.146(3.7)
0.130(3.3)
(V)
0.012(0.3) Typ.
(mA)
I
O
-1
0.071(1.8)
0.056(1.4)
INPUT VOLTAGE
OUTPUT CURRENT
-0.3
T
a
=100
℃
T
a
=25
℃
-0.1
-0.3
Mechanical data
-0.03
•
Epoxy : UL94-V0 rated flame retardant
-0.1
•
Case : Molded plastic, SOD-123H
-30
-0.3
-3
-0.1
-1
-10
-100
,
OUTPUT
terminals,
(mA)
•
Terminals :Plated
CURRENT I
solderable per MIL-STD-750
O
-0.01
-0.0
V
CC
=-5V
0.031(0.8) Typ.
-0.4
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
-2.0
-0.8
-1.2
-1.6
INPUT VOLTAGE
V
I(OFF)
(V)
Method 2026
1000
•
Polarity : Indicated by cathode band
G
I
——
•
Mounting Position : Any
I
O
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
-1000
V
O(ON)
——
I
O
I
O
/I
I
=20
V
O
=-5V
300
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(mV)
V
O(ON)
-300
DC CURRENT GAIN
30
a
RATINGS
a
-100
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
Marking Code
10
T
a
=25
℃
Maximum Recurrent Peak Reverse Voltage
V
RRM
V
RMS
V
DC
I
O
-30
12
20
14
20
OUTPUT VOLTAGE
Ratings at 25℃ ambient temperature unless otherwise specified.
100
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
T =100
℃
G
I
T =100
℃
13
30
21
30
-30
14
40
28
40
15
50
35
50
16
60
42
60
1.0
30
-10
18
80
56
80
10
T
a
=25
℃
100
70
100
115
150
105
150
120
200
140
200
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
3
Peak Forward Surge Current 8.3 ms single half sine-wave
1
superimposed on rated load (JEDEC method)
-0.1
-0.3
-1
-3
-10
I
FSM
R
ΘJA
C
J
T
J
TSTG
f=1MHz
T
a
=25
℃
-100
-10
-30
-100
-1
-3
Typical Thermal Resistance (Note 2)
Operating Temperature Range
C
Storage Temperature Range
O
12
OUTPUT CURRENT
I
O
(mA)
OUTPUT CURRENT
Typical Junction Capacitance (Note 1)
-55 to +125
400
40
120
I
O
(mA)
-55 to +150
——
V
R
P
D
—— T
a
-
65
to +175
(pF)
(mW)
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
C
O
10
CHARACTERISTICS
350
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
V
F
@T A=125℃
0.50
300
0.70
0.5
10
0.85
0.9
0.92
P
D
POWER DISSIPATION
Rated
8
DC Blocking Voltage
NOTES:
OUTPUT CAPACITANCE
6
I
R
250
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
200
DTA114EUA
2- Thermal Resistance From Junction to Ambient
4
150
100
2
50
0
0
4
8
12
16
20
0
0
25
50
75
100
a
125
150
2012-06
REVERSE BIAS VOLTAGE
V
R
(V)
AMBIENT TEMPERATURE
T (
℃
WILLAS
)
ELECTRONIC COR
2012-
0
WILLAS ELECTRONIC CORP.
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
