Ordering number : ENA1381A
TIG058E8
SANYO Semiconductors
DATA SHEET
TIG058E8
Features
•
•
•
•
N-Channel IGBT
Light-Controlling Flash Applications
•
•
•
Low-saturation voltage
Enhansment type
Mounting Height 0.9mm, Mounting Area 8.12mm
2
Halogen free compliance
Low voltage drive (4V)
Built-in Gate-to-Emitter protection diode
dv / dt guarantee*
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
Symbol
VCES
VGES
VGES
ICP
dVCE / dt
Tch
Tstg
PW≤1ms
CM=150μF, VGE=4V
VCE
≤320V,
starting Tch=25°C
Conditions
Ratings
400
±6
±8
150
400
150
-40 to +150
Unit
V
V
V
A
V /
μs
°C
°C
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V /
μs
will be 100% screen-detected in the circuit shown as Fig. 1.
Package Dimensions
unit : mm (typ)
7011A-004
Top View
0.25
2.9
0.15
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3000 pcs./reel
TIG058E8-TL-H
Packing Type: TL
5
0 t o 0.02
Marking
8
ZB
TL
2.8
2.3
LOT No.
0.25
1
0.65
4
0.3
Electrical Connection
8
7
6
5
0.9
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
Bot t om View
0.07
SANYO : ECH8
1
2
3
4
http://semicon.sanyo.com/en/network
60612 TKIM/D1008PJ MSIM TC-00001783 No. A1381-1/7
TIG058E8
Electrical Characteristics
at Ta=25°C
Parameter
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Cutoff Current
Gate-to-Emitter Leakage Current
Gate-to-Emitter Threshold Voltage
Collector-to-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
V(BR)CES
ICES
IGES
VGE(off)
VCE(sat)
Cies
Coes
Cres
Conditions
IC=2mA, VGE=0V
VCE=320V, VGE=0V
VGE=±6V, VCE=0V
VCE=10V, IC=1mA
IC=100A, VGE=4V
VCE=10V, f=1MHz
0.4
4.0
2200
32
24
Ratings
min
400
10
±10
0.9
5.6
typ
max
Unit
V
μA
μA
V
V
pF
pF
pF
Fig.1 Large Current R Load Switching Circuit
RL
CM
RG
+
VCC
4V
0V
TIG058E8
100kΩ
Note1. Gate Series Resistance RG
≥
230
Ω
is recommended for protection purpose at the time of turn OFF. However,
if dv / dt
≤
400V /
μs
is satisfied at customer’s actual set evaluation, RG < 230
Ω
can also be used.
Note2. The collector voltage gradient dv / dt must be smaller than 400V /
μs
to protect the device when it is turned off.
Ordering Information
Device
TIG058E8-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
200
180
IC -- VCE
Tc=25
°
C
200
IC -- VGE
VCE=10V
--
Tc=
Collector Current, IC -- A
Collector Current, IC -- A
160
140
120
100
80
60
40
20
0
0
1
2
3
4
5
6
7
V
=5.0
VGE
4.0V
3.0V
180
160
140
120
100
80
60
40
20
C
25
°
5
°
C
2
75
°
C
2.5V
8
9
10
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Collector-to-Emitter Voltage, VCE -- V
IT14281
Gate-to-Emitter Voltage, VGE -- V
IT14282
No. A1381-2/7
TIG058E8
11
VCE -- VGE
Tc= --25
°
C
Collector-to-Emitter Voltage, VCE -- V
11
10
9
8
7
6
5
4
3
2
1
2
VCE -- VGE
Tc=25
°
C
Collector-to-Emitter Voltage, VCE -- V
10
9
8
7
6
5
4
3
2
1
2
3
4
5
6
IT14283
IC=150A
130A
IC =150A
130A
100A
100A
3
4
5
6
IT14284
Gate-to-Emitter Voltage, VGE -- V
11
VCE -- VGE
Gate-to-Emitter Voltage, VGE -- V
12
11
VCE(sat) -- Tc
Tc=75
°
C
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Collector-to-Emitter Voltage, VCE -- V
VGE=4V
10
9
8
7
6
5
4
3
2
1
2
3
4
5
6
IT14285
10
9
8
7
6
5
4
3
2
--50
--25
0
25
50
75
100
125
150
IC =15
0A
130A
15
I C=
0A
130A
100A
100A
Gate-to-Emitter Voltage, VGE -- V
Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
--50
VGE(off) -- Tc
5
3
2
Cies, Coes, Cres -- VCE
Cies
Case Temperature, Tc --
°C
IT14286
f=1MHz
Cies, Coes, Cres -- pF
1000
7
5
3
2
100
7
5
3
2
10
7
Coes
Cres
0
2
4
6
8
10
12
14
16
18
20
--25
0
25
50
75
100
125
150
Case Temperature, Tc --
°C
7
5
SW Time -- ICP
tf
IT14287
7
5
Collector-to-Emitter Voltage, VCE -- V
IT14288
SW Time -- RG
Switching Time, SW Time -- ns
3
2
Switching Time, SW Time -- ns
td (off)
Test circuit Fig.1
VGE=4V
VCC=320V
RG=270Ω
CM=150μF
PW=50μs
3
2
1000
7
5
3
2
100
7
5
Test circuit Fig.1
VGE=4V
VCC=320V
ICP=150A
CM=150μF
PW=50μs
1000
7
5
3
2
ff
t d(o
tf
)
tr
n)
t d(o
tr
td(on)
2
3
5
7
2
3
IT14289
100
7
100
3
2
3
5
7
100
2
3
5
Collector Current (Pulse), ICP -- A
Gate Series Resistance, RG --
Ω
7 1000
IT14290
No. A1381-3/7
TIG058E8
1400
1200
dv / dt -- RG
Collector Current (Pulse), ICP -- A
Fig.1 Switching test circuit
VGE=4V
VCC=320V
RL=2Ω
CM=150μF
PW=50μs
180
160
140
120
100
80
60
40
20
0
0
ICP -- VGE
VCE=320V
CM=150μF
Turn OFF, dv / dt -- V /
μs
Tc=25
°
C
1000
800
600
400
200
0
0
Tc=70
°
C
50
100
150
200
250
300
IT14291
1
2
3
4
5
6
7
8
IT14292
Gate Series Resistance, RG --
Ω
450
400
CM -- ICP
Gate-to-Emitter Voltage, VGE -- V
Maximum Capacitor, CM --
μF
350
300
250
200
150
100
50
0
0
20
40
60
80
100
120
VGE=5V
VCE=320V
CM=150μF
Tc≤70°C
140
160
Collector Current (Pulse), ICP -- A
IT14293
No. A1381-4/7
TIG058E8
Embossed Taping Specification
TIG058E8-TL-H
No. A1381-5/7
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