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TIG058E8-TL-H

Description
N-Channel IGBT Light-Controlling Flash Applications
File Size174KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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TIG058E8-TL-H Overview

N-Channel IGBT Light-Controlling Flash Applications

Ordering number : ENA1381A
TIG058E8
SANYO Semiconductors
DATA SHEET
TIG058E8
Features
N-Channel IGBT
Light-Controlling Flash Applications
Low-saturation voltage
Enhansment type
Mounting Height 0.9mm, Mounting Area 8.12mm
2
Halogen free compliance
Low voltage drive (4V)
Built-in Gate-to-Emitter protection diode
dv / dt guarantee*
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Collector-to-Emitter Voltage
Gate-to-Emitter Voltage (DC)
Gate-to-Emitter Voltage (Pulse)
Collector Current (Pulse)
Maximum Collector-to-Emitter dv / dt
Channel Temperature
Storage Temperature
Symbol
VCES
VGES
VGES
ICP
dVCE / dt
Tch
Tstg
PW≤1ms
CM=150μF, VGE=4V
VCE
≤320V,
starting Tch=25°C
Conditions
Ratings
400
±6
±8
150
400
150
-40 to +150
Unit
V
V
V
A
V /
μs
°C
°C
* : Concerning dv / dt (slope of Collector Voltage at the time of Turn-OFF), dv / dt > 400V /
μs
will be 100% screen-detected in the circuit shown as Fig. 1.
Package Dimensions
unit : mm (typ)
7011A-004
Top View
0.25
2.9
0.15
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3000 pcs./reel
TIG058E8-TL-H
Packing Type: TL
5
0 t o 0.02
Marking
8
ZB
TL
2.8
2.3
LOT No.
0.25
1
0.65
4
0.3
Electrical Connection
8
7
6
5
0.9
1 : Emitter
2 : Emitter
3 : Emitter
4 : Gate
5 : Collector
6 : Collector
7 : Collector
8 : Collector
Bot t om View
0.07
SANYO : ECH8
1
2
3
4
http://semicon.sanyo.com/en/network
60612 TKIM/D1008PJ MSIM TC-00001783 No. A1381-1/7

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