WILLAS
SOT-723 Plastic-Encapsulate
RECTIFIERS -20V- 200V
Diodes
1.0A SURFACE MOUNT SCHOTTKY BARRIER
SOD-123
•
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
FM120-M
DAP222M
THRU
FM1200-M
Pb Free Product
PACKAGE
Features
Package outline
SOD-123H
•
Low profile surface mounted application in order to
optimize board space.
SWITCHING DIODE
•
Low power loss, high efficiency.
•
High
FEATURES
current capability, low forward voltage drop.
•
High surge capability.
Ultra
•
Small Surface Mounting Type
Guardring for overvoltage protection.
Ultra
•
High Speed Switching Applications
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
High
•
Reliability
•
Lead-free parts meet environmental standards of
SOT-723
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
Pb-Free package is available
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
•
RoHS product for packing code suffix ”G”
Halogen free product for packing code suffix “H”
Mechanical data
Moisture Sensitivity Level 1
Halogen free product for packing code suffix "H"
ina
ry
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
MARKING: P
: Indicated by cathode band
•
Polarity
MAXIMUM RATINGS ( T
a
=25
℃
unless otherwise noted )
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Symbol
Parameter
V
RRM
Ratings at 25℃ ambient temperature unless otherwise specified.
Working Peak Reverse Voltage
V
RWM
Single phase half wave, 60Hz, resistive of inductive load.
RMS
current by 20%
V
R(RMS)
For capacitive load, derate
Reverse Voltage
Marking Code
Dimensions in inches and (millimeters)
Value
Unit
V
V
V
Peak Reverse Voltage
80
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
im
V
RRM
12
20
13
30
80
56
14
40
28
40
15
300
50
50
35
4
16
60
Pr
el
I
O
SYMBOL
RATINGS
Continuous Forward Current
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
UN
mA
100
Peak Forward Current
I
FM
Maximum Recurrent Peak Reverse Voltage
18
10
mA
80
100
56
80
115
150
105
150
120
200
140
Vo
14
21
Maximum RMS Voltage
V
Surge Current (t=1µs)
Non-Repetitive Peak Forward
RMS
I
FSM
Maximum DC Blocking Voltage
20
30
V
DC
Maximum Average Forward Rectified Current
42
P
D
Power Dissipation
I
O
150
60
1.0
30
40
120
A
mW
℃/W
70
100
Vo
200
Vo
Am
Peak Forward Surge Current 8.3 ms single half sine-wave
R
θJA
Thermal Resistance from Junction to Ambient
I
FSM
R
ΘJA
C
J
TSTG
833
Junction Temperature
superimposed on rated load (JEDEC method)
T
j
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Storage Temperature Range
T
stg
Storage Temperature
150
-55~+150
℃
Am
-55 to +125
℃
-55 to +150
℃/
P
Operating Temperature Range
T
ELECTRICAL CHARACTERISTICS(T
a
=25
℃
J
unless otherwise specified)
-
65
to +175
℃
℃
Parameter
Reverse voltage
Voltage at 1.0A DC
V
(BR)
=
F
100uA
I
V
R
Maximum Forward
Reverse current
NOTES:
CHARACTERISTICS
Symbol
Test conditions
0.50
Min
0.70
80
Typ
0.85
Max
Unit
V
0.9
0.92
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
UN
Vo
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
I
R
= 70V
V
R
I
R
@T A=125℃
0.5
10
0.1
1.2
3.5
4
µA
V
pF
ns
mA
Forward voltage
= 100mA
I
F
V
F
1-
capacitance
=
=
V
C
tot
Total
Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
R
6V,f 1MHz
Reverse recovery time
2- Thermal Resistance From Junction to Ambient
t
rr
I
F
=5mA, V
R
=6V,R
L
=50Ω
2012-06
WILLAS ELECTRONIC CORP.
2012-1
WILLAS ELECTRONIC CORP.
WILLAS
SOT-723 Plastic-Encapsulate Diodes
Features
1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V
SOD-123
PACKAGE
FM120-M
DAP222M
THRU
FM1200-M
Pb Free Product
Package outline
Outline Drawing
better reverse leakage current and thermal resistance.
•
Low profile surface mounted application in order to
optimize board space.
•
Low power loss, high efficiency.
•
High current capability, low forward voltage drop.
•
High surge capability.
•
Guardring for overvoltage protection.
•
Ultra high-speed switching.
•
Silicon epitaxial planar chip, metal silicon junction.
•
Lead-free parts meet environmental standards of
MIL-STD-19500 /228
•
RoHS product for packing code suffix "G"
Halogen free product for packing code suffix "H"
•
Batch process design, excellent power dissipation offers
SOT-723
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
.049(1.25)
.045(1.15)
Mechanical data
.034(0.85)
.030(0.75)
ry
0.031(0.8) Typ.
•
Epoxy : UL94-V0 rated flame retardant
•
Case : Molded plastic, SOD-123H
,
•
Terminals :Plated terminals, solderable per MIL-STD-750
Method 2026
.049(1.25)
.045(1.15)
.006(0.15)MIN.
0.040(1.0)
0.024(0.6)
0.031(0.8) Typ.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capacitive load, derate current by 20%
RATINGS
Marking Code
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
.003(0.8)
Pr
el
20
14
im
i
V
RRM
V
RMS
V
DC
I
O
30
21
30
40
28
40
20
I
FSM
R
ΘJA
C
J
T
J
TSTG
.007(0.17)
SYMBOL
FM120-M
H FM130-MH
FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150-MH FM1200-MH
.003(0.07)
18
12
13
14
15
16
10
115
120
50
60
80
56
80
1.0
30
100
70
100
150
105
150
200
140
200
35
50
42
60
na
•
Polarity : Indicated by cathode band
•
Mounting Position : Any
•
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
V
V
Maximum Average Forward Rectified Current
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Junction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
-55 to +125
40
120
-55 to +150
℃
-
65
to +175
CHARACTERISTICS
Maximum Forward Voltage at 1.0A DC
Maximum Average Reverse Current at @T A=25℃
Rated DC Blocking Voltage
SYMBOL
FM120-MH
FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH
FM1150-MH
FM1200-MH
U
.034(0.85)
.030(0.45)
V
F
@T A=125℃
0.50
0.70
0.5
10
0.85
0.9
0.92
.011(0.27)
.006(0.15)
I
R
m
NOTES:
1- Measured at 1 MHZ and applied reverse voltage of 4.0 VDC.
2- Thermal Resistance From Junction to Ambient
Dimensions in inches and (millimeters)
2012-06
Rev.C
WILLAS ELECTRONIC CORP
WILLAS ELECTRONIC CORP.
2012-1
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