WILLAS
MM4150
S
0.1AMP S
* Majority carrier conduction
mW
mA
°
C
°
C
1.40
1.30
Forward Current
Junction Temp.
Storage Temp.
Mechanical Data
Items
Package
Case
Lead/Finish
Chip
IF
Tj
Tstg
200
-65 to 200
-65 to 200
.112 (2.85)
.100 (2.55)
.059 (1.5)
.043 (1.1)
Absolute Maximum Ratings (Ta=25
°
C)
Items
Symbol
Ratings
Reverse Voltage
VR
50
Reverse Recovery
trr
4
Time
Power Dissipation
P
tot
500
1N4150 mini-MELF SIGNAL DIODE
Pb Free Product
FEATURES
m i n i -MEL F
Unit
V
ns
* Extremely Low VF
* Extremely thin package
* Low stored charge
MECHANICAL DATA
2 Places
* Case:Molded plastic, JEDEC SOD-323(SC-76)
3.20
* Terminal : Solder plated, solderable per MIL-STD-750,
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
* Weight : 0.000159 ounce, 0.0045 gram
3.40
0.4
0.2
Materials
M
ini MELF
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
Dimensions in millimeters
Ma
Electrical Characteristics (Ta=25
°
C)
Ratings
Minimum Breakdown Voltage
@IR= 100uA
Peak Forward Surge Current
PW< 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Ω
Maximum Thermal Resistance
MAXIMUM RATING AND ELECTRICAL CHA
Symbol
Ratings
Unit
BV
75
Rating 25
o
C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
IFsurge
500
For capacitive load, derate current by 20%
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
V
mA
VF
IR
1.0
100
=
I
F
10mA DC
Conditions
V
nA
pF
ns
°
C/mW
Forward Voltage
Reverse Current
Cj
Mean Rectifying Current
I
F
= 100mA DC
V
4
R
= 10V DC
trr
Peak forward surge current
Capacitance between terminals
4
0.35
R
θ
JA
Operating Temperature
Storage Temperature
WILLAS ELECTRONIC CORP.
京公网安备 11010802033920号
EEWORLD
