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ECH8663R_12

Description
General-Purpose Switching Device Applications
File Size399KB,7 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
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ECH8663R_12 Overview

General-Purpose Switching Device Applications

Ordering number : ENA1184A
ECH8663R
SANYO Semiconductors
DATA SHEET
ECH8663R
Features
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
1unit
When mounted on ceramic substrate (900mm
×0.8mm)
2
2
Conditions
Ratings
30
±12
8
60
1.4
1.5
150
-
-55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-003
Top View
0.25
2.9
0.15
8
5
0 to 0.02
2.8
2.3
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
ECH8663R-TL-H
Packing Type : TL
Marking
TJ
TL
LOT No.
0.25
1
0.65
4
0.3
Electrical Connection
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Bottom View
0.07
0.9
1
2
3
4
SANYO : ECH8
http://semicon.sanyo.com/en/network
62712 TKIM/72308PE TIIM TC-00001535 No. A1184-1/7

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Description General-Purpose Switching Device Applications General-Purpose Switching Device Applications
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