Ordering number : ENA1184A
ECH8663R
SANYO Semiconductors
DATA SHEET
ECH8663R
Features
•
•
•
•
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
•
•
•
Low ON-resistance
2.5V drive
Common-drain type
Protection diode in
Built-in gate protection resistor
Best suited for LiB charging and discharging switch
Halogen free compliance
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
PT
Tch
Tstg
PW≤10μs, duty cycle≤1%
When mounted on ceramic substrate (900mm
×0.8mm)
1unit
When mounted on ceramic substrate (900mm
×0.8mm)
2
2
Conditions
Ratings
30
±12
8
60
1.4
1.5
150
-
-55 to +150
Unit
V
V
A
A
W
W
°C
°C
Package Dimensions
unit : mm (typ)
7011A-003
Top View
0.25
2.9
0.15
8
5
0 to 0.02
2.8
2.3
Product & Package Information
• Package
: ECH8
• JEITA, JEDEC
:-
• Minimum Packing Quantity : 3,000 pcs./reel
ECH8663R-TL-H
Packing Type : TL
Marking
TJ
TL
LOT No.
0.25
1
0.65
4
0.3
Electrical Connection
8
7
6
5
1 : Source1
2 : Gate1
3 : Source2
4 : Gate2
5 : Drain
6 : Drain
7 : Drain
8 : Drain
Bottom View
0.07
0.9
1
2
3
4
SANYO : ECH8
http://semicon.sanyo.com/en/network
62712 TKIM/72308PE TIIM TC-00001535 No. A1184-1/7
ECH8663R
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Source Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
|
yfs
|
RDS(on)1
RDS(on)2
RDS(on)3
RDS(on)4
Turn-ON Delay Time
Rise Time
Turn-OFF Delay Time
Fall Time
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain “Miller” Charge
Diode Forward Voltage
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VSD
IS=8A, VGS=0V
VDS=10V, VGS=4.5V, ID=8A
See specified Test Circuit.
Conditions
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VGS=±8V, VDS=0V
VDS=10V, ID=1mA
VDS=10V, ID=4A
ID=4A, VGS=4.5V
ID=4A, VGS=4.0V
ID=2A, VGS=3.1V
ID=2A, VGS=2.5V
0.5
5
10.5
11
12
12
8.5
15.5
16
17.5
20
320
850
4200
1800
12.3
2.4
2.8
0.75
1.2
20.5
21
23
28
Ratings
min
30
1
±10
1.3
typ
max
Unit
V
μA
μA
V
S
mΩ
mΩ
mΩ
mΩ
ns
ns
ns
ns
nC
nC
nC
V
Static Drain-to-Source On-State Resistance
Switching Time Test Circuit
VIN
4.5V
0V
VIN
ID=4A
RL=3.75Ω
VOUT
VDD=15V
D
PW=10μs
D.C.≤1%
Rg
G
P.G
ECH8663R
50Ω
S
Rg=1kΩ
Ordering Information
Device
ECH8663R-TL-H
Package
ECH8
Shipping
3,000pcs./reel
memo
Pb Free and Halogen Free
No. A1184-2/7
ECH8663R
V
3
4.0
V
2
.1 V
.5V
10
9
8
ID -- VDS
10.0
10
9
8
ID -- VGS
VDS=10V
Drain Current, ID -- A
4.5
V
Drain Current, ID -- A
7
6
5
4
3
2
1
0
0
0.1
0.2
0.3
0.4
0.5
IT13806
7
6
5
4
VGS=1.5V
2
1
0
0
0.5
1.0
Ta=
75
°
C
3
25
°
C
1.5
--25
°
C
2.0
2.5
IT13612
Drain-to-Source Voltage, VDS -- V
100
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
40
RDS(on) -- Ta
Ta=25
°
C
ID=1.5A
3.0A
Static Drain-to-Source
On-State Resistance, RDS(on) -- m
Ω
Static Drain-to-Source
On-State Resistance, RDS(on) -- m
Ω
90
80
70
60
50
40
30
20
10
0
0
2
35
30
25
=3
V GS
=1.
V, I D
.1
5A
20
=
VGS
=1.5
, ID
2.5V
A
3.0A
I D=
V,
=4.5
VGS
15
10
5
--60 --40
=
VGS
--20
3.0
, I D=
4.0V
A
4
6
8
10
IT13613
0
20
40
60
80
100
120
140 160
IT13614
Gate-to-Source Voltage, VGS -- V
10
|
y
fs
|
-- ID
Ambient Temperature, Ta --
°
C
10
7
5
3
2
IS -- VSD
VGS=0V
Forward Transfer Admittance,
|
y
fs
|
-- S
VDS=10V
7
5
=
Ta
3
C
5
°
--2
25
75
°
C
°
C
Source Current, IS -- A
1.0
7
5
3
2
0.1
7
5
3
2
0.01
7
5
3
2
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
Ta=
75
°
C
25
°
2
1.0
0.1
2
3
5
7
1.0
2
3
5
Drain Current, ID -- A
10000
7
10
IT13615
7
0.001
0.1
SW Time -- ID
td (off)
Diode Forward Voltage, VSD -- V
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
--25
°
C
C
IT13616
VGS -- Qg
5
3
2
tf
1000
7
5
tr
td(on)
3
2
0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
3
5 7 10
IT13680
Gate-to-Source Voltage, VGS -- V
VDD=10V
VGS=4.5V
VDS=10V
ID=8A
Switching Time, SW Time -- ns
0
1
2
3
4
5
6
7
8
9
10
11
12
13
Drain Current, ID -- A
Total Gate Charge, Qg -- nC
IT13681
No. A1184-3/7
ECH8663R
2
100
7
5
3
2
10
7
5
3
2
1.0
7
5
3
2
ASO
Allowable Power Dissipation, PD -- W
1.6
PD -- Ta
When mounted on ceramic substrate
(900mm
2
×0.8mm)
IDP=60A
Drain Current, ID -- A
ID=8A
10
10
PW
≤
10μs
10
0
μ
s
1m
s
1.5
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
DC
Operation in this
area is limited by RDS(on).
0m
ms
s
op
era
tio
n
To
ta
lD
iss
ip
1u
at
ni
io
t
n
0.1
7
Ta=25
°
C
5
Single pulse
3
2
When mounted on ceramic substrate
2
0.01
(900mm
×0.8mm)
1unit
2 3 5 7 1.0
2 3
0.01 2 3 5 7 0.1
5 7 10
2 3
5
0
20
40
60
80
100
120
140
160
Drain-to-Source Voltage, VDS -- V
IT13682
Ambient Temperature, Ta --
°
C
IT13683
No. A1184-4/7
ECH8663R
Embossed Taping Specification
ECH8663R-TL-H
No. A1184-5/7
京公网安备 11010802033920号
EEWORLD
