2016-01-04
Silicon NPN Phototransistor Arrays
Version 1.3
BPX 80, BPX 82 ... BPX 89
Features:
•
Spectral range of sensitivity:
(typ) 450 ... 1100 nm
•
Package:
Miniature Array, Epoxy
•
Special:
Multiple-digit array package
•
High linearity
•
Available in groups
Applications
•
Miniature photointerrupters
•
Industrial electronics
•
For control and drive circuits
2016-01-04
1
Version 1.3
Ordering Information
Type:
Photocurrent
I
PCE
[µA]
λ = 950 nm, E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
BPX 82
BPX 83
BPX 84
BPX 85
BPX 86
BPX 87
BPX 88
BPX 89
BPX 80
Note:
BPX 80, BPX 82 ... BPX 89
Ordering Code
> 320
> 320
> 320
> 320
> 320
> 320
> 320
> 320
> 320
Only one bin within one packing unit (variation less than 2:1)
Q62702P0021
Q62702P0025
Q62702P0030
Q62702P0031
Q62702P0022
Q62702P0032
Q62702P0033
Q62702P0026
Q62702P0028
2016-01-04
2
Version 1.3
Maximum Ratings
(T
A
= 25 °C)
Parameter
Operating and storage temperature range
Collector-emitter voltage
Collector current
Collector surge current
(τ < 10 µs)
Emitter-collector voltage
Total Power dissipation
Thermal resistance
Electrostatic discharge
(acc. to ANSI/ ESDA/ JEDEC JS-001 - HBM)
Characteristics
(T
A
= 25 °C)
Parameter
Wavelength of max. sensitivity
Spectral range of sensitivity
Radiant sensitive area
Dimensions of chip area
Half angle
Capacitance
(V
CE
= 0 V, f = 1 MHz, E = 0)
Dark current
(V
CE
= 20 V, E = 0)
Rise and fall time
(I
C
= 1 mA, V
CC
= 5 V, R
L
= 1 kΩ)
(typ)
(typ)
(typ)
(typ)
(typ)
(typ)
Symbol
T
op
; T
stg
V
CE
I
C
I
CS
V
EC
P
tot
R
thJA
V
ESD
BPX 80, BPX 82 ... BPX 89
Values
-40 ... 80
35
50
200
7
90
750
2000
Unit
°C
V
mA
mA
V
mW
K/W
V
Symbol
λ
S max
λ
10%
A
LxW
ϕ
C
CE
Values
850
(typ) 450
... 1100
0.11
(typ) 0.55 x
0.55
± 18
7.5
1 (≤ 50)
6
Unit
nm
nm
mm
2
mm x
mm
°
pF
nA
µs
(typ (max)) I
CE0
(typ)
t
r
, t
f
2016-01-04
3
Version 1.3
Grouping
(T
A
= 25 °C, λ = 950 nm)
Group
Min Photocurrent
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
I
PCE, min
[µA]
-A
-B
-C
Group
320
400
500
BPX 80, BPX 82 ... BPX 89
Max Photocurrent Typ Photocurrent Rise and fall time
E
e
= 0.5 mW/cm
2
,
V
CE
= 5 V
I
PCE, max
[µA]
630
800
E
V
= 1000 lx, Std.
Light A, V
CE
= 5 V
I
PCE
[µA]
1500
1900
2300
I
C
= 1 mA, V
CC
= 5
V, R
L
= 1 kΩ
t
r
, t
f
[µs]
5.5
6
8
Collector-emitter saturation voltage
I
C
= I
PCEmin
x 0.3, E
e
= 0.5 mW/cm
2
V
CEsat
[mV]
-A
-B
-C
Note.:
150
150
150
I
PCEmin
is the min. photocurrent of the specified group.
For delivery the components are marked -A, -B, -C. Due to differing yields, it is not possible to order a
definite group.
Relative Spectral Sensitivity
1)
page 10
S
rel
= f(λ)
100
OHF04048
Photocurrent
1)
page 10
I
PCE
= f(E
e
),
V
CE
= 5 V
S
rel
%
80
70
60
50
40
30
20
10
0
400 500 600 700 800 900
nm 1100
λ
2016-01-04
4
Version 1.3
Photocurrent
1)
page 10
I
PCE
/ I
PCE
(25°C) = f(T
A
), V
CE
= 5 V
BPX 80, BPX 82 ... BPX 89
Dark Current
1)
page 10
I
CEO
= f(V
CE
), E = 0
I
CEO
10
1
nA
OHF04049
10
0
10
-1
10
-2
0
5
10
15
20
25
30 V 35
V
CE
Dark Current
1)
page 10
I
CEO
= f(T
A
), E = 0
Collector-Emitter Capacitance
1)
page 10
C
CE
= f(V
CE
), f = 1 MHz, E = 0
OHF04050
I
CEO
10
4
nA
10
3
8
pF
C
CE
7
6
OHF04051
10
2
5
10
1
4
3
2
10
0
10
-1
1
10
-2
-25
0
25
50
75 ˚C 100
0
-3
10
10
-2
10
-1
10
0
10
1
V 10
2
T
A
V
CE
2016-01-04
5
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