KSC2331 — NPN Epitaxial Silicon Transistor
December 2011
KSC2331
NPN Epitaxial Silicon Transistor
Features
•
•
•
•
•
Low Frequency Amplifier & Medium Speed Switching
Complement to KSA931
High Collector-Base Voltage : V
CBO
=80V
Collector Current : I
C
=700mA
Collector Dissipation : P
C
=1W
1
TO-92L
1. Emitter 2. Collector 3. Base
Absolute Maximum Ratings
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Junction Temperature
Storage Temperature
Value
80
60
8
700
1
150
-55 to 150
Units
V
V
V
mA
W
°C
°C
Electrical Characteristics
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE
(sat)
V
BE
(sat)
T
a
= 25°C unless otherwise noted
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Test Condition
I
C
=100μA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10μA, I
C
=0
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
V
CE
=2V, I
C
=50mA
I
C
=500mA, I
B
=50mA
I
C
=500mA, I
B
=50mA
Min.
80
60
8
Typ.
Max.
Units
V
V
V
0.1
0.1
40
0.2
0.86
240
0.7
1.20
μA
μA
V
V
h
FE
Classification
Classification
h
FE
R
40 ~ 80
O
70 ~ 140
Y
120 ~ 240
© 2011 Fairchild Semiconductor Corporation
KSC2331 Rev. B0
1
www.fairchildsemi.com
KSC2331 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
200
180
240
V
CE
= 2V
200
I
C
[mA], COLLECTOR CURRENT
160
140
120
h
FE
, DC CURRENT GAIN
I
B
= 1.4mA
I
B
= 1.2mA
I
B
= 1.0mA
160
100
80
60
40
20
0
0
5
10
15
20
25
30
35
40
45
50
55
120
I
B
= 0.8mA
I
B
= 0.6mA
I
B
= 0.4mA
I
B
= 0.2mA
80
40
0
1
10
100
1000
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
10
1000
I
C
= 10 I
B
V
CE
= 2V
I
C
[mA], COLLECTOR CURRENT
1
100
V
BE
(sat)
0.1
10
V
CE
(sat)
0.01
1
10
100
1000
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
I
C
[mA], COLLECTOR CURRENT
V
BE
[V], BASE-EMITTER VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter On Voltage
10000
1.6
1. T
a
= 25 C
2. *Single Pulse
o
1.4
I
C
[mA], COLLECTOR CURRENT
P
C
[W], POWER DISSIPATION
100
1000
1.2
1.0
0.8
0.6
0.4
0.2
1000
s
m
00
*2
DC
100
10
1
10
0.0
0
25
50
o
75
100
125
150
175
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
T
a
[ C], AMIBIENT TEMPERATURE
Figure 5. Safe Operating Area
Figure 6. Power Derating
© 2011 Fairchild Semiconductor Corporation
KSC2331 Rev. B0
2
www.fairchildsemi.com
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Product Status
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First Production
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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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changes at any time without notice to improve the design.
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The datasheet is for reference information only.
Rev. I60
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