Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection
circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand V
CES
pulses up to
1700V.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.0
2.2
MAX.
1700
825
12
30
125
1.0
-
tbf
UNIT
V
V
A
A
W
V
A
µs
T
mb
≤
25 ˚C
I
C
= 5.0 A; I
B
= 0.91 A
I
CM
= 5.0 A; I
B(end)
= 0.9 A
PINNING - SOT429
PIN
1
2
3
tab
base
collector
emitter
collector
DESCRIPTION
PIN CONFIGURATION
SYMBOL
c
b
1
2
3
e
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
V
CESM
V
CEO
I
C
I
CM
I
B
I
BM
-I
B(AV)
-I
BM
P
tot
T
stg
T
j
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
1
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
12
30
12
25
200
25
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
˚C
˚C
average over any 20 ms period
T
mb
≤
25 ˚C
ESD LIMITING VALUES
SYMBOL
V
C
PARAMETER
CONDITIONS
MIN.
-
MAX.
10
UNIT
kV
Electrostatic discharge capacitor voltage Human body model (250 pF,
1.5 kΩ)
1
Turn-off current.
September 1997
1
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
I
CES
I
CES
I
EBO
BV
EBO
V
CEOsust
V
CEsat
V
BEsat
h
FE
h
FE
PARAMETER
Collector cut-off current
2
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
= 125 ˚C
V
EB
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
B
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 5.0 A; I
B
= 0.91 A
I
C
= 5.0 A; I
B
= 0.91 A
I
C
= 0.1 A; V
CE
= 5 V
I
C
= 5 A; V
CE
= 1 V
MIN.
-
-
-
7.5
825
-
0.78
12
5.5
TYP.
-
-
-
13.5
-
-
0.86
22
8
MAX.
1.0
2.0
1.0
-
-
1.0
0.95
35
11
UNIT
mA
mA
mA
V
V
V
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
Switching times (64 kHz line
deflection circuit)
t
s
t
f
Turn-off storage time
Turn-off fall time
CONDITIONS
I
CM
= 5.0 A; L
C
= 260
µH;
C
fb
= 4.8 nF;
V
CC
= 180 V; I
B(end)
= 0.9 A;
L
B
= 0.6
µH;
-V
BB
= 2 V;
(-dI
B
/dt = 3.33 A/µs)
TYP.
MAX.
UNIT
2.2
tbf
tbf
tbf
µs
µs
IC / mA
+ 50v
100-200R
250
Horizontal
Oscilloscope
Vertical
100R
6V
30-60 Hz
1R
200
100
0
VCE / V
min
VCEOsust
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
TRANSISTOR
IC
DIODE
ICsat
+ 150 v nominal
adjust for ICsat
t
Lc
IB
I B end
t
5 us
6.5 us
16 us
VCE
t
IBend
LB
T.U.T.
Cfb
-VBB
Fig.3. Switching times waveforms (64 kHz).
Fig.5. Switching times test circuit.
ICsat
90 %
IC
100
hFE
VCE = 5 V
BU2727A/AF
Tmb = 25 C
Tmb = 85 C
10 %
tf
ts
IB
IBend
t
10
t
1
0.01
0.1
1
10
IC / A
100
- IBM
Fig.4. Switching times definitions.
Fig.6. DC current gain. h
FE
= f (I
C
)
Parameter T
mb
(Low and high gain)
September 1997
3
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
hFE
100
VCE = 1 V
BU2727A/AF
Tmb = 25 C
Tmb = 85 C
120
110
100
90
80
70
60
50
40
30
20
10
PD%
Normalised Power Derating
10
1
0.01
0
0.1
1
10
IC / A
100
0
20
40
60
80
100
Tmb / C
120
140
Fig.7. DC current gain. h
FE
= f (I
C
)
Parameter T
mb
(Low and high gain)
Fig.10. Normalised power dissipation.
PD% = 100⋅PD/PD 25˚C = f (T
mb
)
VCEsat / V
BU2727A/AF
10
Tmb = 85 C
Tmb = 25 C
10
Zth / (K/W)
BU2525A
1
0.5
1
0.1
IC/IB = 12
IC/IB = 5
0.2
0.1
0.05
0.02
P
D
t
p
D=
t
p
T
t
0.1
0.01
D=0
0.001
1E-06
T
0.01
0.1
1
10
IC / A
100
1E-04
1E-02
t/s
1E+00
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat
= f (I
C
); parameter I
C
/I
B
Fig.11. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
VBEsat / V
1
IC = 6 A
BU2727A/AF
0.9
0.8
0.7
4A
Tmb = 85 C
Tmb = 25 C
0.6
0
1
2
3
IB / A
4
Fig.9. Typical base-emitter saturation voltage.
V
BEsat
= f (I
B
); parameter I
C
September 1997
4
Rev 1.100
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
VCC
IC / A
35
30
BU2727A/AF/D/DF
LC
25
20
Area where
fails occur
IBend
VCL
LB
T.U.T.
CFB
15
10
5
0
100
-VBB
1000
VCE / V
1700
Fig.12. Test Circuit RBSOA.
V
CC
= 150 V; -V
BB
= 1 - 4 V;
L
C
= 1 mH; V
CL
= 1500 V; L
B
= 0.5 - 2
µH;
C
FB
= 1 - 3 nF; I
B(end)
= 0.8 - 4 A
Fig.13. Reverse bias safe operating area. T
j
≤
T
jmax
September 1997
5
Rev 1.100
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