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DL4737AT/R

Description
Zener Diode, 7.5V V(Z), 5.3%, 1W
CategoryDiscrete semiconductor    diode   
File Size56KB,3 Pages
ManufacturerFORMOSA
Websitehttp://www.formosams.com/
Download Datasheet Parametric View All

DL4737AT/R Overview

Zener Diode, 7.5V V(Z), 5.3%, 1W

DL4737AT/R Parametric

Parameter NameAttribute value
MakerFORMOSA
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance4 Ω
Number of components1
Maximum operating temperature200 °C
Maximum power dissipation1 W
Nominal reference voltage7.5 V
surface mountYES
Maximum voltage tolerance5.3%
Working test current34 mA
Formosa MS
DATA SHEET
DL4728A~DL4764A
SURFACE MOUNT ZENER DIODES
VOLTAGE
FEATURES
• Low profile package
• Built-in strain relief
• Low inductance
3.3 to 100 Volts
POWER
1.0 Watts
MELF/DL-41
Unit : inch (mm)
• Case: Molded Glass MELF / DL-41
• Terminals: Solderable per MIL-STD-202E, Method 208
• Polarity: See Diagram Below
• Approx. Weight: 0.008 grams
• Mounting Position: Any
• Packing information
T/R - 5K per 13" paper Reel
.020(0.5)
.012(0.3)
.216(5.5)
.201(5.1)
.020(0.5)
.012(0.3)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Power Dissipation at Tamb = 25
Junction Temperature
Storage Temperature Range
O
Symbol
Value
1*
200
-65 to + 200
C
P
TOT
T
J
T
STG
.110(2.8)
MECHANICAL DATA
Units
W
O
O
*Valid provided that leads at a distance of 10mm from case are kept at ambient temperature.
Parameter
Thermal Resi stance Juncti on to Ambi ent Ai r
Forward Voltage at IF = 200mA
Symbol
Min.
--
--
Typ.
Max.
170*
1.2
RthA
VF
--
--
.102(2.6)DIA.
C
C
Uni ts
K/W
V
*Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature.
PAGE . 1
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