FDMS4435BZ P-Channel Power Trench
®
MOSFET
March 2011
FDMS4435BZ
P-Channel PowerTrench
®
MOSFET
-30 V, -18 A, 20 mΩ
Features
Max r
DS(on)
= 20 mΩ at V
GS
= -10 V, I
D
= -9.0 A
Max r
DS(on)
= 37 mΩ at V
GS
= -4.5 V, I
D
= -6.5 A
Extended V
GSS
range (-25 V) for battery applications
High performance trench technology for extremely low r
DS(on)
High power and current handling capability
HBM ESD protection level >7 kV typical (Note 4)
100% UIL tested
Termination is Lead-free and RoHS Compliant
General Description
This P-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced Power Trench
®
process that has
been especially tailored to minimize the on-state resistance. This
device is well suited for Power Management and load
switching applications common in Notebook Computers and
Portable Battery Packs.
Applications
High side in DC-DC Buck Converters
Notebook battery power management
Load switch in Notebook
Top
Bottom
S
Pin 1
S
D
S
G
D
D
D
D
D
D
5
6
7
8
4
3
2
1
G
S
S
S
D
Power 56
MOSFET Maximum Ratings
T
A
= 25 °C unless otherwise noted
Symbol
V
DS
V
GS
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous (Package limited)
I
D
-Continuous (Silicon limited)
-Continuous
-Pulsed
E
AS
P
D
T
J
, T
STG
Single Pulse Avalanche Energy
Power Dissipation
Power Dissipation
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
(Note 3)
T
C
= 25 °C
T
C
= 25 °C
T
A
= 25 °C
(Note 1a)
Parameter
Ratings
-30
±25
-18
-35
-9.0
-50
18
39
2.5
-55 to +150
mJ
W
°C
A
Units
V
V
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1a)
3.2
50
°C/W
Package Marking and Ordering Information
Device Marking
FDMS4435BZ
Device
FDMS4435BZ
Package
Power 56
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C3
1
www.fairchildsemi.com
FDMS4435BZ P-Channel PowerTrench
®
MOSFET
Electrical Characteristics
T
J
= 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Min
Typ
Max
Units
Off Characteristics
BV
DSS
ΔBV
DSS
ΔT
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
I
D
= -250
μA,
V
GS
= 0 V
I
D
= -250
μA,
referenced to 25 °C
V
DS
= -24 V, V
GS
= 0 V
V
GS
= ±25 V, V
DS
= 0 V
-30
-23
-1
±10
V
mV/°C
μA
μA
On Characteristics
V
GS(th)
ΔV
GS(th)
ΔT
J
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
V
GS
= V
DS
, I
D
= -250
μA
I
D
= -250
μA,
referenced to 25 °C
V
GS
= -10 V, I
D
= -9.0 A
r
DS(on)
Static Drain to Source On Resistance
V
GS
= -4.5 V, I
D
= -6.5 A
V
GS
= -10 V, I
D
= -9.0 A
T
J
= 125 °C
V
DS
= -5 V, I
D
= -9.0 A
-1.0
-1.9
6
15
22
21
25
20
37
28
S
mΩ
-3.0
V
mV/°C
g
FS
Forward Transconductance
Dynamic Characteristics
C
iss
C
oss
C
rss
R
g
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
V
DS
= -15 V, V
GS
= 0 V,
f = 1 MHz
1540
290
260
5
2050
390
385
pF
pF
pF
Ω
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Total Gate Charge
Gate to Source Charge
Gate to Drain “Miller” Charge
V
GS
= 0 V to -10 V
V
GS
= 0 V to -4.5 V V
DD
= -15 V,
I
D
= -9.0 A
V
DD
= -15 V, I
D
= -9.0 A,
V
GS
= -10 V, R
GEN
= 6
Ω
9
10
35
19
34
18
5
9
17
18
56
33
47
25
ns
ns
ns
ns
nC
nC
nC
nC
Drain-Source Diode Characteristics
V
SD
t
rr
Q
rr
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0 V, I
S
= -1.9 A
V
GS
= 0 V, I
S
= -9.0 A
(Note 2)
(Note 2)
0.75
0.86
25
12
1.2
1.5
39
21
V
ns
nC
I
F
= -9.0 A, di/dt = 100 A/μs
Notes:
1. R
θJA
is determined with the device mounted on a 1 in
2
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. R
θJC
is guaranteed by design while R
θCA
is determined by
the user's board design.
a) 50 °C/W when mounted on a
1 in
2
pad of 2 oz copper
b) 125 °C/W when mounted
on a minimum pad of 2 oz copper.
2. Pulse Test: Pulse Width < 300
μs,
Duty cycle < 2.0%.
3. E
AS
of 18 mJ is based on starting T
J
= 25
°
C, L = 1 mH, I
AS
= -6 A, V
DD
= -27 V, V
GS
= -10 V. 100% tested at L = 0.3 mH, I
AS
= -8 A.
4. The diode connected between the gate and source serves only as protection against ESD. No gate overvoltage rating is implied.
©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C3
2
www.fairchildsemi.com
FDMS4435BZ P-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25 °C unless otherwise noted
50
V
GS
= -10 V
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
4.0
V
GS
= -6 V
V
GS
= -4.5 V
V
GS
= -4 V
V
GS
= -3.5 V
V
GS
= -4 V
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
-I
D
, DRAIN CURRENT (A)
40
30
20
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
V
GS
= -4.5 V
V
GS
= -3.5 V
V
GS
= -6 V
10
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
V
GS
= -10 V
0
0
1
2
3
4
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
10
20
30
-
I
D
,
DRAIN CURRENT (A)
40
50
Figure 1. On-Region Characteristics
Figure 2. Normalized On-Resistance
vs Drain Current and Gate Voltage
80
SOURCE ON-RESISTANCE
(
m
Ω
)
1.6
NORMALIZED
DRAIN TO SOURCE ON-RESISTANCE
I
D
= - 9 A
V
GS
= -10 V
I
D
= -9 A
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
1.4
1.2
1.0
0.8
0.6
-75
r
DS(on),
DRAIN TO
60
40
T
J
= 125
o
C
20
T
J
= 25
o
C
0
-50
-25
0
25 50 75 100 125 150
T
J
,
JUNCTION TEMPERATURE
(
o
C
)
2
4
6
8
10
-V
GS
,
GATE TO SOURCE VOLTAGE (V)
Figure 3. Normalized On- Resistance
vs Junction Temperature
50
40
V
DS
= -5 V
Figure 4. On-Resistance vs Gate to
Source Voltage
-I
S
, REVERSE DRAIN CURRENT (A)
PULSE DURATION = 80
μ
s
DUTY CYCLE = 0.5% MAX
50
V
GS
= 0 V
10
T
J
= 125
o
C
T
J
= 25
o
C
-I
D
, DRAIN CURRENT (A)
30
T
J
= 125
o
C
1
20
T
J
= 25
o
C
0.1
T
J
= -55
o
C
10
T
J
= -55
o
C
0.01
0
1
2
3
4
5
0.001
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Source to Drain Diode
Forward Voltage vs Source Current
©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C3
3
www.fairchildsemi.com
FDMS4435BZ P-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25 °C unless otherwise noted
10
-V
GS
, GATE TO SOURCE VOLTAGE (V)
I
D
= -9 A
5000
8
6
V
DD
= -15 V
CAPACITANCE (pF)
V
DD
= -10 V
C
iss
1000
C
oss
4
V
DD
= -20 V
2
0
0
8
16
24
32
40
Q
g
, GATE CHARGE (nC)
f = 1 MHz
V
GS
= 0 V
C
rss
100
0.1
1
10
30
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics
Figure 8. Capacitance vs Drain
to Source Voltage
40
-I
D
,
DRAIN CURRENT (A)
20
-I
AS
, AVALANCHE CURRENT (A)
10
T
J
= 25
o
C
T
J
= 100
o
C
T
J
= 125
o
C
32
V
GS
= -10 V
24
16
Package Limited
V
GS
= -4.5 V
8
R
θ
JC
= 3.2 C/W
o
1
0.01
0.1
1
10
0
25
50
75
100
o
125
150
t
AV
, TIME IN AVALANCHE (ms)
T
C
,
CASE TEMPERATURE
(
C
)
Figure 9. Unclamped Inductive
Switching Capability
10
-I
g
, GATE LEAKAGE CURRENT (A)
-1
-2
-3
-4
-5
-6
-7
-8
-9
Figure 10. Maximum Continuous Drain
Current vs Cate Temperature
100
V
GS
= 0 V
100
μ
s
10
10
10
10
10
10
10
10
-I
D
, DRAIN CURRENT (A)
10
1 ms
T
J
= 125
o
C
1
10 ms
THIS AREA IS
LIMITED BY r
DS(on)
SINGLE PULSE
TJ = MAX RATED
R
θ
JA = 125
o
C/W
TA = 25
o
C
100 ms
T
J
= 25
o
C
1s
10 s
DC
0.1
10
-10
0
3
6
9
12
15
18
21
24
27
30
33
0.01
0.05 0.1
1
10
100
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-V
DS
, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Gate Leakage Current vs Gate to
Source Voltage
Figure 12. Forward Bias Safe
Operating Area
©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C3
4
www.fairchildsemi.com
FDMS4435BZ P-Channel PowerTrench
®
MOSFET
Typical Characteristics
T
J
= 25 °C unless otherwise noted
1000
P
(PK)
, PEAK TRANSIENT POWER (W)
100
10
SINGLE PULSE
R
θ
JA
= 125 C/W
o
o
1
0.5
-4
10
T
A
= 25 C
10
-3
10
-2
10
-1
1
10
100
1000
t, PULSE WIDTH (sec)
Figure 13. Single Pulse Maximum Power Dissipation
2
1
NORMALIZED THERMAL
IMPEDANCE, Z
θ
JA
DUTY CYCLE-DESCENDING ORDER
0.1
D = 0.5
0.2
0.1
0.05
0.02
0.01
P
DM
t
1
0.01
SINGLE PULSE
R
θ
JA
= 125 C/W
o
t
2
NOTES:
DUTY FACTOR: D = t
1
/t
2
PEAK T
J
= P
DM
x Z
θJA
x R
θJA
+ T
A
0.001
-4
10
10
-3
10
-2
10
-1
1
10
100
1000
t, RECTANGULAR PULSE DURATION (sec)
Figure 14. Junction-to-Ambient Transient Thermal Response Curve
©2011 Fairchild Semiconductor Corporation
FDMS4435BZ Rev.C3
5
www.fairchildsemi.com
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