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FDD5N50NZ

Description
4 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Categorysemiconductor    Discrete semiconductor   
File Size471KB,8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FDD5N50NZ Overview

4 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252

FDD5N50NZ Parametric

Parameter NameAttribute value
Number of terminals2
Minimum breakdown voltage500 V
Processing package descriptionROHS COMPLIANT, DPAK-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
terminal coatingMATTE Tin
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current4 A
Rated avalanche energy304 mJ
Maximum drain on-resistance1.5 ohm
Maximum leakage current pulse16 A
FDD5N50NZ N-Channel MOSFET
FDD5N50NZ
N-Channel MOSFET
500V, 4A, 1.5
Features
• R
DS(on)
= 1.38 ( Typ.)@ V
GS
= 10V, I
D
= 2A
• Low Gate Charge ( Typ. 9nC)
• Low C
rss
( Typ. 4pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
TM
UniFET-II
November 2011
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
G
S
D
D-PAK
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Power Dissipation
-Continuous (T
C
=
-Continuous (T
C
= 100
o
C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
25
o
C)
Parameter
FDD5N50NZ
500
±25
4
2.4
16
304
4
6.2
10
62
0.5
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
FDD5N50NZ
2.0
90
Units
o
C/W
©2011 Fairchild Semiconductor Corporation
FDD5N50NZ Rev. C0
1
www.fairchildsemi.com

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Description 4 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 4 A, 500 V, 1.5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
Number of terminals 2 2
surface mount Yes YES
Terminal form GULL WING GULL WING
Terminal location single SINGLE
Shell connection DRAIN DRAIN
Number of components 1 1
transistor applications switch SWITCHING
Transistor component materials silicon SILICON
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