FDD5N50NZ N-Channel MOSFET
FDD5N50NZ
N-Channel MOSFET
500V, 4A, 1.5
Features
• R
DS(on)
= 1.38 ( Typ.)@ V
GS
= 10V, I
D
= 2A
• Low Gate Charge ( Typ. 9nC)
• Low C
rss
( Typ. 4pF)
• Fast Switching
• 100% Avalanche Tested
• Improved dv/dt Capability
• ESD Imoroved Capability
• RoHS Compliant
TM
UniFET-II
November 2011
Description
These N-Channel enhancement mode power field effect
transistors are produced using Fairchild’s proprietary, planar
stripe, DMOS technology.
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
G
S
D
D-PAK
MOSFET Maximum Ratings
T
C
= 25
o
C unless otherwise noted*
Symbol
V
DSS
V
GSS
I
D
I
DM
E
AS
I
AR
E
AR
dv/dt
P
D
T
J
, T
STG
T
L
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Drain Current
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
(T
C
= 25
o
C)
- Derate above 25
o
C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
Power Dissipation
-Continuous (T
C
=
-Continuous (T
C
= 100
o
C)
- Pulsed
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
25
o
C)
Parameter
FDD5N50NZ
500
±25
4
2.4
16
304
4
6.2
10
62
0.5
-55 to +150
300
Units
V
V
A
A
mJ
A
mJ
V/ns
W
W/
o
C
o
C
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
FDD5N50NZ
2.0
90
Units
o
C/W
©2011 Fairchild Semiconductor Corporation
FDD5N50NZ Rev. C0
1
www.fairchildsemi.com
FDD5N50NZ N-Channel MOSFET
Package Marking and Ordering Information
Device Marking
FDD5N50NZ
Device
FDD5N50NZTM
Package
D-PAK
Reel Size
380mm
Tape Width
16mm
Quantity
2500
Electrical Characteristics
T
C
= 25
o
C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
Off Characteristics
BV
DSS
BV
DSS
T
J
I
DSS
I
GSS
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Body Leakage Current
I
D
= 250A, V
GS
= 0V, T
J
= 25
o
C
I
D
= 250A, Referenced to 25
o
C
V
DS
= 500V, V
GS
= 0V
V
DS
= 400V, T
C
= 125
o
C
V
GS
= ±25V, V
DS
= 0V
500
-
-
-
-
-
0.5
-
-
-
-
-
1
10
±10
V
V/
o
C
A
A
On Characteristics
V
GS(th)
R
DS(on)
g
FS
Gate Threshold Voltage
Static Drain to Source On Resistance
Forward Transconductance
V
GS
= V
DS
, I
D
= 250A
V
GS
= 10V, I
D
= 2A
V
DS
= 20V, I
D
= 2A
3.0
-
(Note 4)
-
1.38
3.54
5.0
1.5
-
V
S
-
Dynamic Characteristics
C
iss
C
oss
C
rss
Q
g(tot)
Q
gs
Q
gd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
V
DS
= 25V, V
GS
= 0V
f = 1MHz
-
-
-
-
-
(Note 4, 5)
V
DS
= 400V I
D
= 4A
V
GS
= 10V
330
50
4
9
2
4
440
70
6
12
-
-
pF
pF
pF
nC
nC
nC
-
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
V
DD
= 250V, I
D
= 4A
V
GS
= 10V, R
G
= 25
(Note 4, 5)
-
-
-
-
12
22
28
21
35
55
65
50
ns
ns
ns
ns
Drain-Source Diode Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
Maximum Continuous Drain to Source Diode Forward Current
Maximum Pulsed Drain to Source Diode Forward Current
Drain to Source Diode Forward Voltage
V
GS
= 0V, I
SD
= 4A
Reverse Recovery Time
Reverse Recovery Charge
V
GS
= 0V, I
SD
= 4A
dI
F
/dt = 100A/s
(Note 4)
-
-
-
-
-
-
-
-
210
1.1
4
16
1.4
-
-
A
A
V
ns
C
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 38mH, I
AS
= 4A, V
DD
= 50V, R
G
= 25, Starting T
J
= 25C
3. I
SD
4A,
di/dt
200A/s, V
DD
BV
DSS
, Starting T
J
= 25C
4. Pulse Test: Pulse width
300s, Dual Cycle
2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDD5N50NZ Rev. C0
2
www.fairchildsemi.com
FDD5N50NZ N-Channel MOSFET
Typical Performance Characteristics
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
FDD5N50NZ Rev. C0
3
www.fairchildsemi.com
FDD5N50NZ N-Channel MOSFET
Typical Performance Characteristics
(Continued)
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
Figure 9. Maximum Safe Operating Area
vs. Case Temperature
Figure 10. Maximum Drain Current
Figure 11. Transient Thermal Response Curve
P
DM
t
1
t
2
FDD5N50NZ Rev. C0
4
www.fairchildsemi.com
FDD5N50NZ N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDD5N50NZ Rev. C0
5
www.fairchildsemi.com
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