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FDM3622_12

Description
N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ
File Size270KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet View All

FDM3622_12 Overview

N-Channel PowerTrench® MOSFET 100V, 4.4A, 60mΩ

FDM3622 N-Channel PowerTrench
®
MOSFET
November 2012
FDM3622
N-Channel PowerTrench
®
MOSFET
100V, 4.4A, 60mΩ
Features
Max r
DS(on)
= 60mΩ at V
GS
= 10V, I
D
= 4.4A
Max r
DS(on)
= 80mΩ at V
GS
= 6.0V, I
D
= 3.8A
Low Miller Charge
Low QRR Body Diode
Optimized efficiency at high frequencies
UIS Capability (Single Pulse and Repetitive Pulse)
RoHS Compliant
High Voltage Synchronous Rectifier
Formerly developmental type 82744
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor's advanced PowerTrench
®
process that has
been especially tailored to minimize the on-state resistance and
yet maintain low gate charge for superior switching performance.
Applications
Distributed Power Architectures and VRMs.
Primary Switch for 24V and 48V Systems
Top
Pin 1
S
S
S
G
Bottom
S
S
S
G
D
D
D
D
D
D
D
D
MLP 3.3x3.3
MOSFET Maximum Ratings
T
A
= 25°C unless otherwise noted
Symbol
V
DS
V
GS
I
D
P
D
T
J
, T
STG
Drain to Source Voltage
Gate to Source Voltage
Drain Current
-Continuous
-Pulsed
Power Dissipation
Power Dissipation
Operating and Storage Junction Temperature Range
(Note 1a)
(Note 1b)
(Note 1a)
Parameter
Ratings
100
±20
4.4
20
2.1
0.9
-55 to +150
Units
V
V
A
W
°C
Thermal Characteristics
R
θJC
R
θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
(Note 1)
(Note 1a)
3.0
60
°C/W
Package Marking and Ordering Information
Device Marking
FDM3622
Device
FDM3622
Package
MLP 3.3x3.3
Reel Size
13 ’’
Tape Width
12 mm
Quantity
3000 units
©2012 Fairchild Semiconductor Corporation
FDM3622 Rev.C2
1
www.fairchildsemi.com
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