DMD5028 datasheet, PDF - EEWORLD Datasheet

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DMD5028: DescriptionRF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 5 PIN; CategoryDiscrete semiconductor The transistor; File Size99KB，5 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/; Environmental Compliance

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DMD5028 Overview

RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 5 PIN

DMD5028 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, R-XDFM-F4
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	125 V
Maximum drain current (ID)	18 A
FET technology	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-XDFM-F4
JESD-609 code	e4
Number of components	2
Number of terminals	4
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	200 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON

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TetraFET

DMD5028

DMD5028-A

ROHS COMPLIANT

METAL GATE RF SILICON FET

MECHANICAL DATA

(2 pls)

(typ)

(2 pls) A

(4 pls)

GOLD METALLISED

MULTI-PURPOSE SILICON

DMOS RF FET

300W – 50V – 175MHz

PUSH–PULL

FEATURES

• SUITABLE FOR BROAD BAND APPLICATIONS

PIN 2

PIN 4

• SIMPLE BIAS CIRCUITS

• ULTRA-LOW THERMAL RESISTANCE

• BeO FREE

• LOW Crss

• HIGH GAIN – 20 dB MINIMUM

PIN 1

PIN 3

PIN 5

SOURCE (COMMON)

DRAIN 2

GATE 1

DIM

Millimetres

15.24

10.80

45°

9.78

8.38

27.94

1.52R

10.16

21.84

0.10

1.96

1.02

4.45

34.04

1.63R

Tol.

0.50

0.13

5°

0.13

0.15

0.23

0.02

0.13

0.38

0.13

DRAIN 1

GATE 2

Inches

0.600

0.425

45°

0.385

0.330

1.100

0.060R

0.400

0.860

0.004

0.077

0.040

0.175

1.340

0.064R

Tol.

0.020

0.005

5°

0.005

0.006

0.009

0.001

0.005

0.015

0.005

APPLICATIONS

•

VHF/UHF COMMUNICATIONS

from 1 MHz to 175 MHz

DSS

GSS

D(sat)

stg

* Per Side

Power Dissipation

Drain – Source Breakdown Voltage *

Gate – Source Breakdown Voltage*

Drain Current*

Storage Temperature

Maximum Operating Junction Temperature

875W (438W -A Version)

125V

±20V

18A

–65 to 150°C

200°C

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

Website:

http://www.semelab.co.uk

E-mail:

sales@semelab.co.uk

Document Number 6684

Issue 2

DMD5028 Related Products

	DMD5028	DMD5028-A
Description	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 5 PIN	RF Power Field-Effect Transistor, 2-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, D1, 5 PIN
Is it Rohs certified?	conform to	conform to
Maker	TT Electronics plc	TT Electronics plc
package instruction	FLANGE MOUNT, R-XDFM-F4	FLANGE MOUNT, R-XDFM-F4
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	SOURCE	SOURCE
Configuration	COMMON SOURCE, 2 ELEMENTS	COMMON SOURCE, 2 ELEMENTS
Minimum drain-source breakdown voltage	125 V	125 V
Maximum drain current (ID)	18 A	18 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JESD-30 code	R-XDFM-F4	R-XDFM-F4
JESD-609 code	e4	e4
Number of components	2	2
Number of terminals	4	4
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	200 °C	200 °C
Package body material	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	GOLD	GOLD
Terminal form	FLAT	FLAT
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON

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