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KM418V256ALLJ-8

Description
Fast Page DRAM, 256KX18, 80ns, CMOS, PDSO40, PLASTIC, SOJ-40
Categorystorage    storage   
File Size62KB,1 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
Download Datasheet Parametric View All

KM418V256ALLJ-8 Overview

Fast Page DRAM, 256KX18, 80ns, CMOS, PDSO40, PLASTIC, SOJ-40

KM418V256ALLJ-8 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSAMSUNG
Parts packaging codeSOJ
package instructionSOJ, SOJ40,.44
Contacts40
Reach Compliance Codeunknown
ECCN codeEAR99
access modeFAST PAGE
Maximum access time80 ns
Other featuresRAS ONLY; CAS BEFORE RAS; HIDDEN; SELF REFRESH
I/O typeCOMMON
JESD-30 codeR-PDSO-J40
JESD-609 codee0
length26.04 mm
memory density4718592 bit
Memory IC TypeFAST PAGE DRAM
memory width18
Number of functions1
Number of ports1
Number of terminals40
word count262144 words
character code256000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize256KX18
Output characteristics3-STATE
Package body materialPLASTIC/EPOXY
encapsulated codeSOJ
Encapsulate equivalent codeSOJ40,.44
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply3.3 V
Certification statusNot Qualified
refresh cycle512
Maximum seat height3.56 mm
self refreshYES
Maximum standby current0.0001 A
Maximum slew rate0.085 mA
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
width10.16 mm
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