UNISONIC TECHNOLOGIES CO., LTD
UF5305
Preliminary
POWER MOSFET
-31A, -55V P-CHANNEL POWER
MOSFET
DESCRIPTION
The UTC
UF5305
is a P-channel Power MOSFET, it uses
UTC’s advanced technology to provide the customers with high
switching speed and a minimum on-state resistance.
The UTC
UF5305
is suitable for all commercial-industrial
applications, etc.
FEATURES
* R
DS(ON)
<0.06Ω @ V
GS
=-10V, I
D
=-16A
* High Switching Speed
* Dynamic dv/dt Rating
* Halogen Free
SYMBOL
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
UF5305L-TA3-T
UF5305G-TA3-T
UF5305L-TN3-T
UF5305G-TN3-T
UF5305L-TN3-R
UF5305G-TN3-R
Note: Pin Assignment: G: Gate D: Drain S: Source
Package
TO-220
TO-252
TO-252
1
G
G
G
Pin Assignment
2
D
D
D
3
S
S
S
Packing
Tube
Tube
Tape Reel
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QW-R502-842.a
UF5305
ABSOLUTE MAXIMUM RATING
Preliminary
POWER MOSFET
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
V
DSS
-55
V
Gate-Source Voltage
V
GSS
±20
V
Drain Current
V
GS
=-10V, T
C
=25°C
-31
A
Continuous
I
D
V
GS
=-10V, T
C
=100°C
-22
A
Pulsed (Note 2)
I
DM
-110
A
Avalanche Current (Note 2)
I
AR
-16
A
280
mJ
Single Pulse (Note 3)
E
AS
Avalanche Energy
Repetitive (Note 2)
E
AR
11
mJ
Peak Diode Recovery dv/dt (Note 4)
dv/dt
-5.0
V/ns
Power Dissipation (T
C
=25°C)
P
D
110
W
Linear Derating Factor
0.71
W/°C
Junction Temperature
T
J
-55~+150
°C
Storage Temperature Range
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive rating; pulse width limited by max. junction temperature.
3. V
DD
=-25V, Starting T
J
=25°C, L=2.1mH, R
G
=25Ω, I
AS
=-16A.
4. I
SD
≤-16A,
di/dt≤-280A/µs, V
DD
≤BV
DSS
, T
J
≤150°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient
Junction to Case
SYMBOL
θ
JA
θ
JC
RATINGS
62
1.4
UNIT
°C/W
°C/W
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UF5305
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Leakage Current
Gate-Source Leakage Current
Forward
Reverse
Preliminary
POWER MOSFET
ELECTRICAL CHARACTERISTICS
(T
J
=25°C, unless otherwise specified)
SYMBOL
BV
DSS
TEST CONDITIONS
V
GS
=0V, I
D
=-250µA
MIN
-55
-0.034
-25
-250
100
-100
0.06
-4.0
1200
520
250
63
13
29
14
66
39
63
-31
-110
-1.3
71
170
110
250
TYP
MAX
UNIT
V
V/°C
µA
µA
nA
nA
Ω
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
nC
∆BV
DSS
/∆T
J
Reference to 25°C, I
D
=-1mA
I
DSS
I
GSS
V
DS
=-55V, V
GS
=0V
V
DS
=-44V, V
GS
=0V, T
J
=150°C
V
GS
=20V, V
DS
=0V
V
GS
=-20V, V
DS
=0V
ON CHARACTERISTICS
Static Drain-Source On-Resistance
R
DS(ON)
V
GS
=-10V, I
D
=-16A (Note 2)
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=-250µA
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=-25V, f=1.0MHz
Reverse Transfer Capacitance
C
RSS
SWITCHING PARAMETERS
Total Gate Charge
Q
G
I
D
=-16A, V
DS
=-44V, V
GS
=-10V
Gate-to-Source Charge
Q
GS
(Note 2)
Gate-to-Drain ("Miller") Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=-28V, I
D
=-16A, R
G
=6.8Ω
R
D
=1.6Ω (Note 2)
Turn-OFF Delay Time
t
D(OFF)
Fall Time
t
F
SOURCE- DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Body Diode Continuous Source
I
S
Current
Maximum Body-Diode Pulsed Current
I
SM
(Note 1)
T
J
=25°C, I
S
=-16A, V
GS
=0V
Drain-Source Diode Forward Voltage
V
SD
(Note 2)
Body Diode Reverse Recovery Time
t
RR
T
J
=25°C, I
F
=-16A,
di/dt=-100A/µs (Note 2)
Body Diode Reverse Recovery Charge
Q
RR
Note: 1. Repetitive rating; pulse width limited by max. junction temperature.
2. Pulse width≤300µs; duty cycle≤2%.
-2.0
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3 of 6
QW-R502-842.a
UF5305
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS
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QW-R502-842.a
UF5305
Preliminary
POWER MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
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QW-R502-842.a
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