. . . designed for use as audio amplifiers and drivers utilizing complementary or quasi
complementary circuits.
Plastic Medium Power Silicon
NPN Transistor
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS
(TC = 25
_
C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
REV 7
Current Gain–Bandwidth Product
(IC = 500 mAdc, VCE = 2 Vdc,
f = 1.0 MHz)
Base–Emitter On Voltage*
(IC = 0.5 Adc, VCE = 2.0 Vdc)
Collector–Emitter Saturation Voltage*
(IC = 0.5 Adc, IB = 0.05 Adc)
DC current Gain
(IC = 0.15 A, VCE = 2 V)
(IC = 0.5 A, VCE = 2 V)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current
(VCB = 45 Vdc, IE = 0)
(VCB = 80 Vdc, IE = 0)
Collector–Emitter Sustaining Voltage*
(IC = 0.1 Adc, IB = 0)
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Case
Operating and Storage Junction
Temperature Range
Total Device Dissipation @ TC = 25
_
C
Derate above 25
_
C
Total Device Dissipation @ TA = 25
_
C
Derate above 25
_
C
Base Current
Collector Current
Emitter–Base Voltage
Collector–Base Voltage
Collector–Emitter Voltage
Characteristic
Rating
Characteristic
x
300
µs,
Duty Cycle
x
2.0%.
Symbol
TJ, Tstg
VCBO
VCEO
VEBO
PD
PD
IC
IB
Symbol
θ
JC
θ
JA
BD 165
BD 169
BD 165
BD 169
Type
VCE(sat)*
VBE(on)*
Symbol
BVCEO
ICBO
IEBO
hFE*
fT
– 65 to + 150
6.25
Max
100
Value
1.25
8
20
160
0.5
1.5
45
80
45
80
5
BD 165
BD 169
BD 165
BD 169
Type
Watts
mW/
_
C
Watt
mW/
_
C
_
C/W
_
C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
_
C
Min
6.0
40
15
45
80
—
—
—
—
—
1.5 AMPERE
POWER TRANSISTORS
NPN SILICON
45, 60, 80 VOLTS
20 WATTS
BD165
BD169
CASE 77–08
TO–225AA TYPE
0.95
Max
0.5
1.0
0.1
0.1
—
—
—
—
—
Order this document
by BD165/D
mAdc
mAdc
MHz
Unit
Vdc
Vdc
Vdc
1
BD165 BD169
10
TJ = 150°C
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMP)
25
20
15
10
5
0
5.0
3.0
2.0
5.0 ms
1.0
0.5
0.3
0.2
0.1
5.0
SECOND BREAKDOWN
dc
LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ TC = 25°C
PULSE CURVES APPLY BELOW
BD165
RATED VCEO
BD169
7.0
10
20
30
50
70
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
100
100
µs
1.0 ms
0
20
40
60
80
100
120 140
TC, CASE TEMPERATURE (°C)
160
Figure 1. PD – TC Derating Curve
VCE , COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 2. Safe Operating Area (see Note 1)
1.2
1
0.8
0.6
0.4
0.2
0
IC = 0.1 A
0.25 A
0.5 A
1A
1
5
10
50
100
IB, BASE CURRENT (mA)
500
1000
Figure 3. Collector Saturation Region
10
hFE , DC CURRENT GAIN, NORMALIZED
1
0.5
TJ = + 150°C
+ 25°C
– 25°C
VOLTAGE (VOLTS)
VBE(sat) at IC/IB = 10
0.1
0.05
VCE(sat) at IC/IB = 10
VCE = 2 V
TJ = 25°C
0.01
VBE at VCE = 2 V
1
0.1
0.01
0.05
0.1
IC, COLLECTOR CURRENT (A)
0.5
1
10
50
100
IC, COLLECTOR CURRENT (mA)
500
1000
Figure 4. Current Gain
Note 1:
There are two limitations on the power handling ability of a
transistor; average junction temperature and second break-
down. Safe operating area curves indicate IC – VCE limits of
the transistor that must be observed for reliable operation;
i.e., the transistor must not be subjected to greater dissipa-
tion than the curves indicate.
2
Figure 5. “On” Voltage
The data of Figure 2 is based on T J(pk) = 150
_
C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T J(pk)
150
_
C. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
v
Motorola Bipolar Power Transistor Device Data
BD165 BD169
PACKAGE DIMENSIONS
–B–
U
Q
F
M
C
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
B
C
D
F
G
H
J
K
M
Q
R
S
U
V
INCHES
MIN
MAX
0.425
0.435
0.295
0.305
0.095
0.105
0.020
0.026
0.115
0.130
0.094 BSC
0.050
0.095
0.015
0.025
0.575
0.655
5
_
TYP
0.148
0.158
0.045
0.055
0.025
0.035
0.145
0.155
0.040
–––
MILLIMETERS
MIN
MAX
10.80
11.04
7.50
7.74
2.42
2.66
0.51
0.66
2.93
3.30
2.39 BSC
1.27
2.41
0.39
0.63
14.61
16.63
5
_
TYP
3.76
4.01
1.15
1.39
0.64
0.88
3.69
3.93
1.02
–––
–A–
1 2 3
H
K
V
G
S
D
2 PL
0.25 (0.010)
M
J
R
0.25 (0.010)
A
M
A
M
M
B
M
B
M
STYLE 1:
PIN 1. EMITTER
2. COLLECTOR
3. BASE
CASE 77–08
TO–225AA TYPE
ISSUE V
Motorola Bipolar Power Transistor Device Data
3
BD165 BD169
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit,
and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters can and do vary in different
applications. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Motorola does
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systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of
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associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part.
Motorola and
are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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