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MGFS36E2325_10

Description
2.3-2.5GHz HBT HYBRID IC
File Size66KB,6 Pages
ManufacturerMitsubishi
Websitehttp://www.mitsubishielectric.com/semiconductors/
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MGFS36E2325_10 Overview

2.3-2.5GHz HBT HYBRID IC

MITSUBISHI SEMICONDUCTOR
MGFS36E2325
Specifications are subject to change without notice.
2.3-2.5GHz HBT HYBRID IC
Outline Drawing
DESCRIPTION
MGFS36E2325 is a GaAs RF amplifier designed
for WiMAX CPE.
4.5
1.0
FEATURES
InGaP HBT Device
6V Operation
27dBm Linear Output Power
33dB Linear Gain
Integrated Output Power Detector
Integrated 1-bit 16dB Step Attenuator
50ohms Matched
Surface Mount Package
RoHS Compliant Package
4.5
36E
2325
(Lot No.)
10
9
8
7
6
APPLICATIONS
IEEE802.16-2004, IEEE802.16e-2005
1
2
3
4
5
1
2
3
4
5
6
7
8
9
10
Pin
Vc (Vcb)
Vc (Vc1)
Vc (Vc2)
Vc (Vc3)
Pout
Po_det
GND
Vref
Vcont
DIM IN mm
(X-ray Top View)
FUNCTIONAL BLOCK DIAGRAM
Vc1
1000pF
Vc2
Vc3
1000pF
1000pF
Pin
Vcont
(0/3V)
Vcb
1000pF
Pout
Bias Circuit
Vref
Po_det
33kohms
Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the
possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give
due consideration to safety when making your circuit designs, with appropriate measures such as (i)placement of substitutive, auxiliary, circuits,
(ii)use of non-flammable material or (iii)prevention against any malfunction or mishap.
MITSUBISHI ELECTRIC CORP.
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