DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D168
BYG70 series
Fast soft-recovery
controlled avalanche rectifiers
Preliminary specification
1996 Jun 05
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
FEATURES
•
Glass passivated
•
High maximum operating
temperature
•
Low leakage current
•
Excellent stability
•
Guaranteed avalanche energy
absorption capability
•
UL 94V-O classified plastic
package
•
Shipped in 12 mm embossed tape.
Top view
Side view
handbook, 4 columns
BYG70 series
The well-defined void-free case is of a
transfer-moulded thermo-setting
plastic.
DESCRIPTION
DO-214AC surface mountable
package with glass passivated chip.
cathode
band
k
a
MSA474
Fig.1 Simplified outline (DO-214AC; SOD106) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
RRM
PARAMETER
repetitive peak reverse voltage
BYG70D
BYG70G
BYG70J
V
R
continuous reverse voltage
BYG70D
BYG70G
BYG70J
I
F(AV)
average forward current
averaged over any 20 ms period;
T
tp
= 100
°C;
see Fig.2
averaged over any 20 ms period;
Al
2
O
3
PCB mounting (see Fig.7);
T
amb
= 60
°C;
see Fig.3
averaged over any 20 ms period;
epoxy PCB mounting (see Fig.7);
T
amb
= 60
°C;
see Fig.3
I
FSM
non-repetitive peak forward current t = 10 ms half sine wave;
T
j
= T
j max
prior to surge;
V
R
= V
RRMmax
non-repetitive peak reverse
avalanche energy
storage temperature
junction temperature
see Fig.4
L = 120 mH; T
j
= T
j max
prior to surge;
inductive load switched off
−
−
−
−
−
200
400
600
1.00
0.53
V
V
V
A
A
−
−
−
200
400
600
V
V
V
CONDITIONS
MIN.
MAX.
UNIT
−
0.39
A
−
20
A
E
RSM
T
stg
T
j
−
−65
−65
10
+175
+175
mJ
°C
°C
1996 Jun 05
2
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
V
(BR)R
PARAMETER
forward voltage
reverse avalanche
breakdown voltage
BYG70D
BYG70G
BYG70J
I
R
reverse current
V
R
= V
RRMmax
;
see Fig.6
V
R
= V
RRMmax
; T
j
= 165
°C;
see Fig.6
t
rr
reverse recovery time
when switched from I
F
= 0.5 A to
I
R
= 1 A; measured at I
R
= 0.25 A;
see Fig.8
V
R
= 0 V; f = 1 MHz
CONDITIONS
I
F
= 1 A; T
j
= T
j max;
see Fig.5
I
F
= 1 A; see Fig.5
I
R
= 0.1 mA
300
500
700
−
−
−
−
−
−
−
−
−
MIN.
−
−
BYG70 series
TYP.
−
−
MAX.
2.1
3.6
V
V
UNIT
−
−
−
5
100
30
V
V
V
µA
µA
ns
C
d
diode capacitance
−
30
−
pF
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
note 2
Notes
1. Device mounted on Al
2
O
3
printed-circuit board, 0.7 mm thick; thickness of copper
≥35 µm,
see Fig.7.
2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper
≥40 µm,
see Fig.7.
For more information please refer to the
“General Part of associated Handbook”.
CONDITIONS
VALUE
25
100
150
UNIT
K/W
K/W
K/W
1996 Jun 05
3
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
GRAPHICAL DATA
MGD485
BYG70 series
MGD486
handbook, halfpage
2.0
handbook, halfpage
0.8
IF(AV)
(A)
1.5
IF(AV)
(A)
0.6
1.0
0.4
0.5
0.2
0
0
100
Ttp (°C)
200
0
0
100
Tamb (°C)
200
V
R
= V
RRMmax
;
δ
= 0.5; a = 1.57.
V
R
= V
RRMmax
;
δ
= 0.5; a = 1.57.
Device mounted as shown in Fig.7;
solid line: Al
2
O
3
PCB; dotted line: epoxy PCB.
Fig.2
Maximum permissible average forward
current as a function of tie-point temperature
(including losses due to reverse leakage).
Fig.3
Maximum permissible average forward
current as a function of ambient temperature
(including losses due to reverse leakage).
MGD487
200
handbook, halfpage
Tj
(°C)
160
MGD488
handbook, halfpage
5
IF
(A)
4
120
3
80
D
40
G
J
2
1
0
0
400
VR (V)
800
0
0
2
4
6
VF (V)
8
Device mounted as shown in Fig.7.
Solid line: Al
2
O
3
PCB.
Dotted line: epoxy PCB.
Solid line: T
j
= 25
°C.
Dotted line: T
j
= 175
°C.
Fig.4
Maximum permissible junction temperature
as a function of reverse voltage.
Fig.5
Forward current as a function of forward
voltage; maximum values.
1996 Jun 05
4
Philips Semiconductors
Preliminary specification
Fast soft-recovery
controlled avalanche rectifiers
BYG70 series
10
3
handbook, halfpage
IR
(µA)
10
2
MGC532
50
4.5
50
10
2.5
1
0
100
Tj ( C)
o
200
1.25
MSB213
V
R
= V
RMMmax
.
Dimensions in mm.
Material: AL
2
O
3
or epoxy-glass.
Fig.6
Reverse current as a function of junction
temperature; maximum values.
Fig.7
Printed-circuit board for surface mounting.
handbook, full pagewidth
DUT
+
IF
(A)
0.5
1
Ω
t rr
10
Ω
25 V
50
Ω
0
0.25
0.5
IR
(A)
1.0
t
MAM057
Input impedance oscilloscope: 1 MΩ, 22 pF; t
r
≤
7 ns.
Source impedance: 50
Ω;
t
r
≤
15 ns.
Fig.8 Test circuit and reverse recovery time waveform and definition.
1996 Jun 05
5
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