M2V12S30TP-6 datasheet, PDF - EEWORLD Datasheet

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M2V12S30TP-6: DescriptionSynchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54; Categorystorage storage; File Size417KB，49 Pages; ManufacturerMitsubishi; Websitehttp://www.mitsubishielectric.com/semiconductors/

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M2V12S30TP-6 Overview

Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54

M2V12S30TP-6 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Mitsubishi
Parts packaging code	TSOP2
package instruction	TSOP2, TSOP54,.46,32
Contacts	54
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	FOUR BANK PAGE BURST
Maximum access time	5.4 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz
I/O type	COMMON
interleaved burst length	1,2,4,8
JESD-30 code	R-PDSO-G54
JESD-609 code	e0
length	22.22 mm
memory density	536870912 bit
Memory IC Type	SYNCHRONOUS DRAM
memory width	8
Number of functions	1
Number of ports	1
Number of terminals	54
word count	67108864 words
character code	64000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	64MX8
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Encapsulate equivalent code	TSOP54,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	3.3 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	1,2,4,8,FP
Maximum standby current	0.001 A
Maximum slew rate	0.28 mA
Maximum supply voltage (Vsup)	3.6 V
Minimum supply voltage (Vsup)	3 V
Nominal supply voltage (Vsup)	3.3 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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MITSUBISHI LSIs

SDRAM (Rev.1.1)

MITSUBISHI

Single Data Rate

ELECTRIC

M2V12S20/ 30/ 40 TP -6, -6L, -7, -7L

512M Synchronous DRAM

Feb. '02

DESCRIPTION

M2V12S20TP is a 4-bank x 33,554,432-word x 4-bit,

M2V12S30TP is a 4-bank x 16,777,216-word x 8-bit,

M2V12S40TP is a 4-bank x 8,388,608-word x 16-bit,

synchronous DRAM, with LVTTL interface. All inputs and outputs are referenced to the rising edge of

CLK. The M2V12S20/30/40TP achieve very high speed data rate up to 100MHz (-7) , 133MHz (-6)

and are suitable for main memory or graphic memory in computer systems.

FEATURES

-Single 3.3v + 0.3V power supply

- Max. Clock frequency -6:PC133<3-3-3> / -7:PC100<2-2-2>

- Fully Synchronous operation referenced to clock rising edge

- Single Data Rate

- 4 bank operations are controlled by BA0, BA1 (Bank Address)

- /CAS latency- 2/3 (programmable)

- Burst length- 1/2/4/8/full page (programmable)

- Burst type- sequential / interleave (programmable)

- Random column access

- Auto precharge / All bank precharge is controlled by A10

- 8192 refresh cycles /64ms (4 banks concurrent refresh)

- Auto refresh and Self refresh

- Row address A0-12 / Column address A0-9,11-12(x4)/ A0-9,11(x8)/ A0-9(x16)

- LVTTL Interface

-Both 54-pin TSOP Package

M2V12S*0TP: 0.8mm lead pitch 54-pin TSOP Package

-Low Power for the Self Refresh Current ICC6 :4mA (-6L,-7L)

Max. Frequency

@CL2

Max. Frequency

@CL3

Standard

M2V12S20/30/40TP-6,-6L

100MHz

133MHz

PC133 (CL3)

M2V12S20/30/40TP-7,-7L

100MHz

PC100 (CL2)

Contents are subject to change without notice.

MITSUBISHI ELECTRIC

-1-

M2V12S30TP-6 Related Products

	M2V12S30TP-6	M2V12S20TP-6L	M2V12S40TP-7	M2V12S40TP-6L	M2V12S30TP-6L
Description	Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54	Synchronous DRAM, 128MX4, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54	Synchronous DRAM, 32MX16, 6ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54	Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54	Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54, 0.400 X 0.875 INCH, TSOP2-54
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi	Mitsubishi
Parts packaging code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
package instruction	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32	TSOP2, TSOP54,.46,32
Contacts	54	54	54	54	54
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
access mode	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST
Maximum access time	5.4 ns	5.4 ns	6 ns	5.4 ns	5.4 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	133 MHz	133 MHz	100 MHz	133 MHz	133 MHz
I/O type	COMMON	COMMON	COMMON	COMMON	COMMON
interleaved burst length	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8	1,2,4,8
JESD-30 code	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54	R-PDSO-G54
JESD-609 code	e0	e0	e0	e0	e0
length	22.22 mm	22.22 mm	22.22 mm	22.22 mm	22.22 mm
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit	536870912 bi
Memory IC Type	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM
memory width	8	4	16	16	8
Number of functions	1	1	1	1	1
Number of ports	1	1	1	1	1
Number of terminals	54	54	54	54	54
word count	67108864 words	134217728 words	33554432 words	33554432 words	67108864 words
character code	64000000	128000000	32000000	32000000	64000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C
organize	64MX8	128MX4	32MX16	32MX16	64MX8
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TSOP2	TSOP2	TSOP2
Encapsulate equivalent code	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32	TSOP54,.46,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
power supply	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES	YES
Continuous burst length	1,2,4,8,FP	1,2,4,8,FP	1,2,4,8	1,2,4,8	1,2,4,8,FP
Maximum standby current	0.001 A	0.001 A	0.001 A	0.001 A	0.001 A
Maximum slew rate	0.28 mA	0.28 mA	0.26 mA	0.28 mA	0.28 mA
Maximum supply voltage (Vsup)	3.6 V	3.6 V	3.6 V	3.6 V	3.6 V
Minimum supply voltage (Vsup)	3 V	3 V	3 V	3 V	3 V
Nominal supply voltage (Vsup)	3.3 V	3.3 V	3.3 V	3.3 V	3.3 V
surface mount	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	10.16 mm	10.16 mm	10.16 mm	10.16 mm

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