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Datasheet> All Categories > Discrete semiconductor> The transistor> DSA9005S0L
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DSA9005S0L

Description
Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, SSMINI3-F3-B, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size498KB，3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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DSA9005S0L Overview

Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, SSMINI3-F3-B, 3 PIN

DSA9005S0L Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerPanasonic
package instructionSMALL OUTLINE, R-PDSO-F3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage50 V
ConfigurationSINGLE
Minimum DC current gain (hFE)200
JESD-30 codeR-PDSO-F3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power dissipation(Abs)0.125 W
surface mountYES
Terminal formFLAT
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz

DSA9005S0L Preview

This product complies with the RoHS Directive (EU 2002/95/EC).
DSA9005
Silicon PNP epitaxial planar type
For general amplification
Complementary to DSC9005
DSA5005 in SSMini3 type package
Features
Low collector-emitter saturation voltage V
CE(sat)
Contributes to miniaturization of sets, reduction of component count.
High forward current transfer ratio h
FE
with excellent linearity
Eco-friendly Halogen-free package
Package
Code
SSMini3-F3-B
Package dimension clicks here.→
Click!
Packaging
DSA9005×0L Embossed type (Thermo-compression sealing): 3000 pcs / reel (standard)
Absolute Maximum Ratings
T
a
= 25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
–60
–50
–6
–200
–300
125
150
–55 to +150
Unit
V
V
V
mA
mA
mW
°C
°C
Name
Pin
1. Base
2. Emitter
3. Collector
Marking Symbol: A3
Electrical Characteristics
T
a
= 25°C±3°C
Parameter
Collector-emitter voltage (Base open)
Collector-base cutoff current (Emitter open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
*
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
(Common base, input open circuited)
Symbol
V
CEO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
f
T
C
ob
Conditions
I
C
= –100
mA,
I
B
= 0
V
CB
= –60 V, I
E
= 0
V
EB
= –6 V, I
C
= 0
V
CE
= –6 V, I
C
= –1 mA
V
CE
= –6 V, I
C
= – 0.1 mA
I
C
= –100 mA, I
B
= –10 mA
V
CE
= –6 V, I
C
= –10 mA
V
CB
= –6 V, I
E
= 0, f = 1 MHz
150
5.0
150
90
– 0.3
Min
–50
– 0.1
– 0.1
390
Typ
Max
Unit
V
mA
mA
V
MHz
pF
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Code
Rank
h
FE1
Marking Symbol
R
R
150 to 270
A3R
S
S
200 to 390
A3S
0
No-rank
150 to 390
A3
Product of no-rank is not classified and have no marking symbol for rank.
Publication date: February 2012
Ver. AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DSA9005
DSA9005_PC-Ta
DSA9005_IC-VCE
DSA9005_hFE-IC
P
C
T
a
150
−120
T
a
=
25°C
125
100
75
50
25
0
−100
I
C
V
CE
600
I
B
= −600 µA
−500 µA
−400 µA
−300 µA
−200 µA
−40
−100 µA
−20
0
h
FE
I
C
V
CE
= −10
V
Collector power dissipation P
C
(mW)
Forward current transfer ratio h
FE
500
400
300
25°C
200
100
0
−10
−1
−30°C
Collector current I
C
(mA)
−80
−60
T
a
=
85°C
0
40
80
120
160
200
0
−2
−4
−6
−8
−10
−12
−1
−10
−10
2
Ambient temperature T
a
(
°C
)
DSA9005_VCEsat-IC
Collector-emitter voltage V
CE
(V)
DSA9005_IC-VBE
Collector current I
C
(mA)
DSA9005_Cob-VCB
V
CE(sat)
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
−10
I
C
/ I
B
= 10
−120
V
CE
= −10
V
−100
I
C
V
BE
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
25°C
4.0
C
ob
V
CB
I
E
= 0
f = 1 MHz
T
a
= 25°C
Collector current I
C
(mA)
T
a
=
85°C
−80
−60
−40
−20
0
−30°C
−1
3.0
2.0
−10
−1
T
a
=
85°C
−30°C
25°C
−1
−10
−10
2
1.0
−10
−2
−10
−1
0
−
0.2
−
0.4
−
0.6
−
0.8
−1.0 −1.2
0
−1
−10
−10
2
Collector current I
C
(mA)
DSA9005_fT-IC
Base-emitter voltage V
BE
(V)
Collector-base voltage V
CB
(V)
f
T
I
C
250
V
CE
=
−10
V
T
a
=
25°C
Transition frequency f
T
(MHz)
200
150
100
50
0
−10
−1
−1
−10
−10
2
Collector current I
C
(mA)
2
Ver. AED
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1)
If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.
(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any
other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any
other company which may arise as a result of the use of technical information described in this book.
(3) The products described in this book are intended to be used for general applications (such as office equipment, communications
equipment, measuring instruments and household appliances), or for specific applications as expressly stated in this book.
Consult our sales staff in advance for information on the following applications:
–
Special applications (such as for airplanes, aerospace, automotive equipment, traffic signaling equipment, combustion equipment,
life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of
the products may directly jeopardize life or harm the human body.
It is to be understood that our company shall not be held responsible for any damage incurred as a result of or in connection with
your using the products described in this book for any special application, unless our company agrees to your using the products in
this book for any special application.
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of our company.
20100202
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DSA9005S0L Related Products

DSA9005S0L DSA9005R0L DSA900500L
Description Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, SSMINI3-F3-B, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, SSMINI3-F3-B, 3 PIN Small Signal Bipolar Transistor, 0.2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, HALOGEN FREE, SSMINI3-F3-B, 3 PIN
Maker Panasonic Panasonic Panasonic
package instruction SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3 SMALL OUTLINE, R-PDSO-F3
Reach Compliance Code compliant compliant unknown
ECCN code EAR99 EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A 0.2 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 200 150 150
JESD-30 code R-PDSO-F3 R-PDSO-F3 R-PDSO-F3
Number of components 1 1 1
Number of terminals 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Nominal transition frequency (fT) 150 MHz 150 MHz 150 MHz
Is it Rohs certified? conform to conform to -
Maximum operating temperature 150 °C 150 °C -
Maximum power dissipation(Abs) 0.125 W 0.125 W -

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