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SHSMG1026

Description
Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, SHD-6, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size55KB,4 Pages
ManufacturerSENSITRON
Websitehttp://www.sensitron.com/
Download Datasheet Parametric View All

SHSMG1026 Overview

Insulated Gate Bipolar Transistor, 50A I(C), 600V V(BR)CES, N-Channel, HERMETIC SEALED, SHD-6, 3 PIN

SHSMG1026 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerSENSITRON
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codecompliant
Shell connectionCOLLECTOR
Maximum collector current (IC)50 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-CBCC-N3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)312 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
IGBT
HIGH SPEED IGBT DEVICES
V
CES
PART
NUMBER
CONTINUOU
S
COLLECTOR
CURRENT
I
C
@ Tc=90
o
C
CONTINUOU
S
COLLECTOR
CURRENT
I
C
@ T
C
=25
o
C
Volts
Amps
Amps
PULSED
COLLEC
T.
CURRE
NT
T
C
=25
o
C
1 ms
Amps
V
CE(sat)
@I
c
C
iss
typ
t
fi
typ
25
o
C
MAXIMU
M
P
D
@
T
C
=25
o
C
R
θJC
PACKAGE
STYLE
V
A
pF
ns
Watts
o
C/W
SHSMG1003
SHSMG1004
600
600
30
50
60
75
120
200
1.8
2.5
30
50
2500
4000
130
180
312
400
0.4
0.31
SHD-6
HIGH SPEED, IMPROVED SCSOA IGBT DEVICES
V
CES
PART
NUMBER
CONTINUOU
S
COLLECTOR
CURRENT
I
C
@ Tc=90
o
C
CONTINUOU
S
COLLECTOR
CURRENT
I
C
@ T
C
=25
o
C
Volts
Amps
Amps
PULSED
COLLEC
T.
CURRE
NT
T
C
=25
o
C
1 ms
Amps
V
CE(sat)
@I
c
C
iss
typ
t
fi
typ
25
o
C
MAXIMU
M
P
D
@
T
C
=25
o
C
R
θJC
PACKAGE
STYLE
V
A
pF
ns
Watts
o
C/W
SHSMG1009
SHSMG1010
600
1200
50
35
75
70
200
140
2.5
4.0
50
35
4000
3900
200
500
400
400
0.31
0.31
SHD-6
HERMETIC SURFACE MOUNT IGBT DEVICES
LOW V
CE(sat)
IGBT DEVICES
V
CES
PART
NUMBER
CONTINUOU
S
COLLECTOR
CURRENT
I
C
@ Tc=90
o
C
CONTINUOU
S
COLLECTOR
CURRENT
I
C
@ T
C
=25
o
C
PULSED
COLLEC
T.
CURRE
NT
T
C
=25
o
C
1 ms
Amps
200
V
CE(sat)
@I
c
C
iss
typ
t
fi
typ
25
o
C
MAXIMU
M
P
D
@
T
C
=25
o
C
R
θJC
PACKAG
E
STYLE
Volts
Amps
SHSMG1012
600
60
Amps
75
V
A
pF
ns
Watts
o
C/W
1.8
60
4000
500
400
0.31
SHD-6
SHSMG1015
1200
25
50
100
3.0
25
2750
1200
312
0.4
SHD-6
LOW V
CE(sat)
, IMPROVED SCSOA IGBT DEVICES
V
CES
PART
NUMBER
CONTINUOU
S
COLLECTOR
CURRENT
I
C
@ Tc=90
o
C
CONTINUOU
S
COLLECTOR
CURRENT
I
C
@ T
C
=25
o
C
PULSED
COLLEC
T.
CURRE
NT
T
C
=25
o
C
1 ms
Amps
SHSMG1016
600
30
50
100
2.5
30
2760
400
312
0.4
V
CE(sat)
@I
c
C
iss
typ
t
fi
typ
25
o
C
MAXIMUM
P
D
@
T
C
=25
o
C
R
θJC
PACKAG
E
STYLE
Volts
Amps
Amps
V
A
pF
ns
Watts
o
C/W
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