RN2109ACT datasheet, PDF - EEWORLD Datasheet

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RN2109ACT: DescriptionSwitching, Inverter Circuit, Interface Circuit and Driver Circuit Applications; CategoryDiscrete semiconductor The transistor; File Size139KB，6 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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RN2109ACT Overview

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2109ACT Parametric

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-N3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.47
Shell connection	COLLECTOR
Maximum collector current (IC)	0.08 A
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-N3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	PNP
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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RN2107ACT~RN2109ACT

TOSHIBA Transistor

Silicon PNP Epitaxial Type (PCT process) (Bias Resistor built-in Transistor)

RN2107ACT,RN2108ACT,RN2109ACT

Switching, Inverter Circuit, Interface Circuit and

Driver Circuit Applications

Top View

0.6±0.05

0.25±0.03

Unit: mm

•

Incorporating a bias resistor into a transistor reduces parts count.

•

Reducing the parts count enable the manufacture of ever more

compact equipment and save assembly cost.

•

Complementary to RN1107ACT to RN1109ACT

1.0±0.05

３

0.65±0.02

１

0.25±0.03

２

0.35±0.02

0.15±0.03

0.05±0.03

Type No.

RN2107ACT

RN2108ACT

R1 (kΩ)

R2 (kΩ)

CST3

JEDEC

JEITA

TOSHIBA

Weight:

1.BASE

2.EMITTER

3.COLLECOTR

―

2-1J1A

RN2109ACT

0.75 mg (typ.)

Absolute Maximum Ratings

(Ta = 25°C)

Characteristics

Collector-base voltage

Collector-emitter voltage

RN2107ACT to RN2109ACT

RN2107ACT

Emitter-base voltage

RN2108ACT

RN2109ACT

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2107ACT to RN2109ACT

stg

EBO

Symbol

CBO

CEO

Rating

−50

−6

−7

−15

−80

100*

150

−55

to 150

°C

Unit

* : Mounted on FR4 board (10 mm

10 mm

1 mm)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant

change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating

conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

2010-04-06

0.38 +0.02

-0.03

Equivalent Circuit and Bias Resistor Values

0.05±0.03

•

Extra small package (CST3) is applicable for extra high density

fabrication.

0.5±0.03

RN2109ACT Related Products

	RN2109ACT	RN2107ACT
Description	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications	Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Maker	Toshiba Semiconductor	Toshiba Semiconductor
package instruction	SMALL OUTLINE, R-PDSO-N3	SMALL OUTLINE, R-PDSO-N3
Contacts	3	3
Reach Compliance Code	unknow	unknow
ECCN code	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO IS 0.47	BUILT-IN BIAS RESISTOR RATIO IS 4.7
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.08 A	0.08 A
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	70	80
JESD-30 code	R-PDSO-N3	R-PDSO-N3
Number of components	1	1
Number of terminals	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	PNP	PNP
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	NO LEAD	NO LEAD
Terminal location	DUAL	DUAL
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON

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