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RN2112CT

Description
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
CategoryDiscrete semiconductor    The transistor   
File Size130KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric Compare View All

RN2112CT Overview

Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications

RN2112CT Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionCHIP CARRIER, R-XBCC-N3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTOR
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-emitter maximum voltage20 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)300
JESD-30 codeR-XBCC-N3
Number of components1
Number of terminals3
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formNO LEAD
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
RN2112CT,RN2113CT
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process) (Bias Resistor Built-in Transistor)
RN2112CT,RN2113CT
Switching Applications
Inverter Circuit Applications
Interface Circuit Applications
Driver Circuit Applications
1.0±0.05
Unit: mm
0.6±0.05
0.5±0.03
0.25±0.03
Complementary to RN1112CT, RN1113CT
0.25±0.03
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly cost.
0.35±0.02
Equivalent Circuit
C
0.15±0.03
0.65±0.02
0.05±0.03
Incorporating a bias resistor into a transistor reduces parts count.
1.BASE
B
R1
CST3
JEDEC
E
2.EMITTER
3.COLLECOTR
2-1J1A
JEITA
TOSHIBA
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
j
T
stg
Rating
−20
−20
−5
−50
50
150
−55
to 150
Unit
V
V
V
mA
mW
°C
°C
Weight: 0.75 mg (typ.)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e.operatingtemperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1
2009-04-17
0.38 +0.02
-0.03
0.05±0.03

RN2112CT Related Products

RN2112CT RN2113CT
Description Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
Maker Toshiba Semiconductor Toshiba Semiconductor
package instruction CHIP CARRIER, R-XBCC-N3 CHIP CARRIER, R-XBCC-N3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Other features BUILT-IN BIAS RESISTOR BUILT-IN BIAS RESISTOR
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 0.05 A 0.05 A
Collector-emitter maximum voltage 20 V 20 V
Configuration SINGLE WITH BUILT-IN RESISTOR SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 300 300
JESD-30 code R-XBCC-N3 R-XBCC-N3
Number of components 1 1
Number of terminals 3 3
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER
Polarity/channel type PNP PNP
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
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