RN2907AFS~RN2909AFS
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN2907AFS, RN2908AFS, RN2909AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
0.1±0.05
0.8±0.05
0.1±0.05
0.15±0.05
4
Q2
3
Unit: mm
•
•
0.35 0.35
1.0±0.05
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs.
0.7±0.05
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
1
2
3
6
5
4
0.1±0.05
•
Complementary to the RN1907AFS to RN1909AFS
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2907AFS
RN2908AFS
RN2909AFS
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
B
R1
R2
fS6
JEDEC
JEITA
TOSHIBA
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
―
―
2-1F1D
Weight: 1 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2907AFS to RN2909AFS
RN2907AFS
Emitter-base voltage
RN2908AFS
RN2909AFS
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2907AFS to RN2909AFS
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−80
50
150
−55
to 150
mA
mW
°C
°C
1
2
V
Q1
Unit
V
V
6
5
Equivalent Circuit
(top view)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2010-05-14
RN2907AFS~RN2909AFS
RN2907AFS
-100
COLLECTOR CURRENT IC (mA)
IC - VI (ON)
-10000
RN2907AFS
IC - VI (OFF)
-10
Ta = 100°C
25
-1
-25
(μA
）
COLLECTOR CURRENT IC (uA)
COMMON EMITTER
VCE = -0.2 V
COMMON EMITTER
VCE = -5 V
-1000
Ta = 100°C
25
-25
-100
-0.1
-0.1
-1
-10
-100
-10
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
INPUT VOLTAGE
VI (ON) (V)
INPUT VOLTAGE
VI (OFF) (V)
RN2908AFS
-100
COLLECTOR CURRENT IC (mA)
IC - VI (ON)
-10000
RN2908AFS
IC - VI (OFF)
-10
Ta = 100°C
(μA
）
COLLECTOR CURRENT IC (uA)
COMMON EMITTER
VCE = -0.2 V
COMMON EMITTER
VCE = -5 V
-1000
Ta = 100°C
25
-25
-1
25
-25
-100
-0.1
-0.1
-1
-10
-100
-10
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
INPUT VOLTAGE
VI (ON) (V)
INPUT VOLTAGE
VI (OFF) (V)
-100
COLLECTOR CURRENT IC (mA)
RN2909AFS
IC - VI (ON)
-10000
COLLECTOR CURRENT IC
(μA
）
(uA)
RN2909AFS
IC - VI (OFF)
COMMON EMITTER
VCE = -0.2 V
COMMON EMITTER
VCE = -5 V
-10
Ta = 100°C
25
-1
-25
-1000
Ta = 100°C
25
-25
-100
-0.1
-0.1
-1
-10
-100
-10
-0.5
-1
-1.5
-2
-2.5
-3
-3.5
INPUT VOLTAGE
VI (ON) (V)
INPUT VOLTAGE
VI (OFF) (V)
3
2010-05-14
Embedded System
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