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RN2907AFS

Description
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
CategoryDiscrete semiconductor    The transistor   
File Size160KB,6 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

RN2907AFS Overview

Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications

RN2907AFS Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
package instructionSMALL OUTLINE, R-PDSO-F6
Contacts6
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresBUILT-IN BIAS RESISTANCE RATIO IS 4.7
Maximum collector current (IC)0.08 A
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)80
JESD-30 codeR-PDSO-F6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typePNP
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
RN2907AFS~RN2909AFS
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT Process) (Transistor with Built-in Bias Resistor)
RN2907AFS, RN2908AFS, RN2909AFS
Switching, Inverter Circuit, Interface Circuit and
Driver Circuit Applications
1.0±0.05
0.1±0.05
0.8±0.05
0.1±0.05
0.15±0.05
4
Q2
3
Unit: mm
0.35 0.35
1.0±0.05
Incorporating a bias resistor into a transistor reduces the parts count.
Reducing the parts count enables the manufacture of ever more
compact equipment and lowers assembly costs.
0.7±0.05
Two devices are incorporated into a fine-pitch, small-mold (6-pin)
package.
1
2
3
6
5
4
0.1±0.05
Complementary to the RN1907AFS to RN1909AFS
0.48
-0.04
+0.02
Equivalent Circuit and Bias Resistor Values
C
Type No.
RN2907AFS
RN2908AFS
RN2909AFS
E
R1 (kΩ)
10
22
47
R2 (kΩ)
47
47
22
B
R1
R2
fS6
JEDEC
JEITA
TOSHIBA
1. EMITTER1
2. BASE1
3. COLLECTOR2
4. EMITTER2
5. BASE2
6. COLLECTOR1
(E1)
(B1)
(C2)
(E2)
(B2)
(C1)
2-1F1D
Weight: 1 mg (typ.)
Absolute Maximum Ratings
(Ta = 25°C)
(Q1, Q2 common)
Characteristic
Collector-base voltage
Collector-emitter voltage
RN2907AFS to RN2909AFS
RN2907AFS
Emitter-base voltage
RN2908AFS
RN2909AFS
Collector current
Collector power dissipation
Junction temperature
Storage temperature range
RN2907AFS to RN2909AFS
I
C
P
C
(Note 1)
T
j
T
stg
V
EBO
Symbol
V
CBO
V
CEO
Rating
−50
−50
−6
−7
−15
−80
50
150
−55
to 150
mA
mW
°C
°C
1
2
V
Q1
Unit
V
V
6
5
Equivalent Circuit
(top view)
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Total rating
1
2010-05-14

RN2907AFS Related Products

RN2907AFS RN2908AFS RN2909AFS
Description Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Is it lead-free? Lead free Lead free Lead free
package instruction SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6 SMALL OUTLINE, R-PDSO-F6
Contacts 6 6 6
Reach Compliance Code unknow unknow unknow
ECCN code EAR99 EAR99 EAR99
Other features BUILT-IN BIAS RESISTANCE RATIO IS 4.7 BUILT-IN BIAS RESISTANCE RATIO IS 2.13 BUILT-IN BIAS RESISTANCE RATIO IS 21.36
Maximum collector current (IC) 0.08 A 0.08 A 0.08 A
Collector-emitter maximum voltage 50 V 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE) 80 80 70
JESD-30 code R-PDSO-F6 R-PDSO-F6 R-PDSO-F6
Number of components 2 2 2
Number of terminals 6 6 6
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP PNP
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON
Is it Rohs certified? conform to conform to -
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED -
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED -
Maker - Toshiba Semiconductor Toshiba Semiconductor
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