TC74VHC10F/FT
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74VHC10F,TC74VHC10FT
Triple 3-Input NAND Gate
TC74VHC10F
The TC74VHC10 is an advanced high speed CMOS 3-INPUT
NAND GATE fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
The internal circuit is composed of 3 stages including buffer
output, which provide high noise immunity and stable output.
An input protection circuit ensures that 0 to 5.5 V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
TC74VHC10FT
Features
•
•
•
•
•
•
•
High speed: t
pd
=
3.9 ns (typ.) at V
CC
=
5 V
Low power dissipation: I
CC
=
2
μA
(max) at Ta
=
25°C
High noise immunity: V
NIH
=
V
NIL
=
28% V
CC
(min)
Power down protection is provided on all inputs.
Balanced propagation delays: t
pLH
∼
t
pHL
−
Wide operating voltage range: V
CC
(opr)
=
2 to 5.5 V
Pin and function compatible with 74ALS10
Weight
SOP14-P-300-1.27A
TSSOP14-P-0044-0.65A
: 0.18 g (typ.)
: 0.06 g (typ.)
1
2012-02-29
TC74VHC10F/FT
Pin Assignment
IEC Logic Symbol
1A
1B
1C
2A
2B
2C
3A
3B
3C
(1)
(2)
(13)
(3)
(4)
(5)
(9)
(10)
(11)
(8)
3Y
(6)
2Y
&
1A
1B
2A
2B
2C
2Y
GND
1
2
3
4
5
6
7
(top view)
14
13
12
11
10
9
8
V
CC
1C
1Y
3C
3B
3A
3Y
(12)
1Y
Truth Table
A
L
X
X
H
B
X
L
X
H
C
X
X
L
H
Y
H
H
H
L
X: Don’t care
Absolute Maximum Ratings (Note)
Characteristics
Supply voltage range
DC input voltage
DC output voltage
Input diode current
Output diode current
DC output current
DC V
CC
/ground current
Power dissipation
Storage temperature
Symbol
V
CC
V
IN
V
OUT
I
IK
I
OK
I
OUT
I
CC
P
D
T
stg
Rating
−0.5
to 7.0
−0.5
to 7.0
−0.5
to V
CC
+ 0.5
−20
±20
±25
±50
180
−65
to 150
Unit
V
V
V
mA
mA
mA
mA
mW
°C
Note:
Exceeding any of the absolute maximum ratings, even briefly, lead to deterioration in IC performance or
even destruction.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings and the operating ranges.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
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2012-02-29
TC74VHC10F/FT
Operating Ranges (Note)
Characteristics
Supply voltage
Input voltage
Output voltage
Operating temperature
Input rise and fall time
Symbol
V
CC
V
IN
V
OUT
T
opr
dt/dv
Rating
2.0 to 5.5
0 to 5.5
0 to V
CC
−40
to 85
0 to 100 (V
CC
= 3.3 ± 0.3 V)
0 to 20 (V
CC
= 5 ± 0.5 V)
Unit
V
V
V
°C
ns/V
Note:
The operating ranges must be maintained to ensure the normal operation of the device.
Unused inputs must be tied to either VCC or GND.
Electrical Characteristics
DC Characteristics
Test Condition
Characteristics
Symbol
V
CC
(V)
2.0
High-level input
voltage
V
IH
―
3.0
to
5.5
2.0
Low-level input
voltage
V
IL
―
3.0
to
5.5
2.0
High-level output
voltage
V
IN
= V
IH
or
V
IL
I
OH
=
−50 μA
3.0
4.5
I
OH
=
−4
mA
I
OH
=
−8
mA
3.0
4.5
2.0
I
OL
= 50
μA
Low-level output
voltage
V
OL
V
IN
= V
IH
I
OL
= 4 mA
I
OL
= 8 mA
Input leakage
current
Quiescent supply
current
I
IN
I
CC
V
IN
= 5.5 V or GND
V
IN
= V
CC
or GND
3.0
4.5
3.0
4.5
0 to
5.5
5.5
―
―
1.9
2.9
4.4
2.58
3.94
―
―
―
―
―
―
―
―
―
2.0
3.0
4.5
―
―
0.0
0.0
0.0
―
―
―
―
Min
1.50
V
CC
×
0.7
Ta = 25°C
Typ.
―
―
Max
―
―
Ta =
−40
to 85°C
Min
1.50
V
CC
×
0.7
Max
―
―
Unit
V
0.50
V
CC
×
0.3
―
―
―
―
―
0.1
0.1
0.1
0.36
0.36
±0.1
2.0
―
―
1.9
2.9
4.4
2.48
3.80
―
―
―
―
―
―
―
0.50
V
CC
×
0.3
―
―
―
―
―
0.1
0.1
0.1
0.44
0.44
±1.0
20.0
μA
μA
V
V
V
V
OH
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2012-02-29
TC74VHC10F/FT
AC Characteristics
(input: t
r
= t
f
= 3 ns)
Characteristics
Symbol
Test Condition
V
CC
(V)
3.3 ± 0.3
―
5.0 ± 0.5
―
(Note)
C
L
(pF)
15
50
15
50
Min
―
―
―
―
―
―
Ta = 25°C
Typ.
5.7
8.2
3.9
5.4
4
17
Max
8.4
11.9
5.9
7.9
10
―
Ta =
−40
to 85°C
Min
1.0
1.0
1.0
1.0
―
―
Max
10.0
13.5
7.0
9.0
10
―
pF
pF
ns
Unit
Propagation delay
time
t
pLH
t
pHL
Input capacitance
Power dissipation
capacitance
C
IN
C
PD
Note: C
PD
is defined as the value of the internal equivalent capacitance which is calculated from the operating
current consumption without load.
Average operating current can be obtained by the equation:
I
CC (opr)
= C
PD
·V
CC
·f
IN
+ I
CC
/3 (per gate)
Input Equivalent Circuit
INPUT
4
2012-02-29
TC74VHC10F/FT
Package Dimensions
Weight: 0.18 g (typ.)
5
2012-02-29
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