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TC74VHC10F_12

Description
Triple 3-Input NAND Gate
File Size180KB,7 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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TC74VHC10F_12 Overview

Triple 3-Input NAND Gate

TC74VHC10F/FT
TOSHIBA CMOS Digital Integrated Circuit
Silicon Monolithic
TC74VHC10F,TC74VHC10FT
Triple 3-Input NAND Gate
TC74VHC10F
The TC74VHC10 is an advanced high speed CMOS 3-INPUT
NAND GATE fabricated with silicon gate C
2
MOS technology.
It achieves the high speed operation similar to equivalent
Bipolar Schottky TTL while maintaining the CMOS low power
dissipation.
The internal circuit is composed of 3 stages including buffer
output, which provide high noise immunity and stable output.
An input protection circuit ensures that 0 to 5.5 V can be
applied to the input pins without regard to the supply voltage.
This device can be used to interface 5 V to 3 V systems and two
supply systems such as battery back up. This circuit prevents
device destruction due to mismatched supply and input voltages.
TC74VHC10FT
Features
High speed: t
pd
=
3.9 ns (typ.) at V
CC
=
5 V
Low power dissipation: I
CC
=
2
μA
(max) at Ta
=
25°C
High noise immunity: V
NIH
=
V
NIL
=
28% V
CC
(min)
Power down protection is provided on all inputs.
Balanced propagation delays: t
pLH
t
pHL
Wide operating voltage range: V
CC
(opr)
=
2 to 5.5 V
Pin and function compatible with 74ALS10
Weight
SOP14-P-300-1.27A
TSSOP14-P-0044-0.65A
: 0.18 g (typ.)
: 0.06 g (typ.)
1
2012-02-29

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