EEWORLDEEWORLDEEWORLD

Part Number

Search

SB3H90

Description
3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size8MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
Download Datasheet Compare View All

SB3H90 Overview

3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD

SB3H90 THRU SB3H100
High Voltage Schottky Rectifiers
90V-100V
3.0A
FEATURES
DO-201AD
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
• Low power loss, high efficiency
• For use in low voltage high frequency inverters,
free wheeling, and polarity protection applications
• Guardring for overvoltage protection
• High temperature soldering guaranteed:
250°C/10 seconds at terminals
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
Mechanical Data
Case:
JEDEC DO-201AD molded plastic body
Terminals:
Plated axial leads, solderable per
MIL-STD-750, Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.04 oz., 1.12g
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Maximum Ratings and Thermal Characteristics
(T
Parameter
Maximum repetitive peak reverse voltage
Maximum working reverse voltage
Maximum DC blocking voltage
Maximum average forward rectified current at T
L
= 90°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Peak repetitive reverse surge current at t
p
= 2.0µs, 1KH
Z
Critical rate of rise of reverse voltage
Maximum thermal resistance
(2)
Storage temperature range
Maximum operating junction temperature
Symbol
V
RRM
V
RWM
V
DC
I
F(AV)
I
FSM
I
RRM
dv/dt
R
θJA
R
θJL
T
STG
T
J
(T
A
= 25°C unless otherwise noted)
A
= 25°C unless otherwise noted)
SB3H90
90
90
90
3.0
100
1.0
10,000
30
10
SB3H100
100
90
100
Unit
V
V
V
A
A
A
V/µs
°C/W
°C
°C
–55 to +175
+175
Electrical Characteristics
Maximum instantaneous
forward voltage at:
(1)
Maximum DC reverse current
at rated DC blocking voltage
I
F
= 3.0A, T
J
= 25°C
I
F
= 3.0A, T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
V
F
I
R
0.80
0.65
20
4
V
µA
mA
Notes:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) P.C.B. mounted with 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

SB3H90 Related Products

SB3H90 SB3H100
Description 3 A, 90 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1861  1573  235  2396  600  38  32  5  49  13 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号