NTE2673 (NPN) & NTE2674 (PNP)
Silicon Complementary Transistors
General Purpose Power
TO220FP Type Package
Features:
D
Low Collector−Emitter Saturation Voltage: V
CD(sat)
= 0.5V Typ (I
C
/I
B
= 2A/0.2A)
Absolute Maximum Ratings:
(T
A
= +25°C unless otherwise specified)
Collector−Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60V
Collector−Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50V
Emitter−Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Collector Current, I
C
Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3A
Peak (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A
Collector Power Dissipation (T
C
= +25°C, Note 2), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25W
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150°C
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
−55°
to +150°C
Note 1. Single pulse: Pulse Width = 10ms.
Note 2. Printed circuit board 1.7mm thick, collector copper plating 1cm
2
or larger.
Electrical Characteristics:
(T
A
= +25°C unless otherwise specified)
Parameter
Collector−Base Breakdown Voltage
Collector−Emitter Breakdown Voltage
Emitter−Base Breakdown Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector−Emitter Saturation Voltage
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Symbol
V
(BR)CBO
I
C
= 50μA
V
(BR)CEO
I
C
= 1mA
V
(BR)EBO
I
E
= 50μA
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
C
ob
V
CE
= 40V
V
EB
= 4V
I
C
= 2A, I
B
= 200mA, Note 3
I
C
= 500mA, V
CE
= 3V, Note 3
I
E
= -500mA, V
CE
= 5V, f = 30MHz, Note 3
V
CB
= 10V, I
E
= 0A, f
test
= 1MHz
Test Conditions
Min
60
50
5
−
−
−
60
−
−
Typ
−
−
−
−
−
0.5
−
90
40
Max
−
−
−
1
1
1.0
320
−
−
MHz
pF
Unit
V
V
V
μA
μA
V
Note 3. Measured using pulse current.
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