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UF4005-GT3

Description
Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, LEAD FREE, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size118KB,3 Pages
ManufacturerSangdest Microelectronics (Nanjing) Co., Ltd.
Environmental Compliance
Download Datasheet Parametric View All

UF4005-GT3 Overview

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-41, LEAD FREE, PLASTIC PACKAGE-2

UF4005-GT3 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSangdest Microelectronics (Nanjing) Co., Ltd.
package instructionO-PALF-W2
Reach Compliance Codeunknown
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-41
JESD-30 codeO-PALF-W2
Humidity sensitivity level1
Number of components1
Number of terminals2
Maximum output current1 A
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.075 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
SENSITRON
SEMICONDUCTOR
Date Sheet 4806, Rev. -
UF4001-G – UF4007-G
1.0A ULTRAFAST RECOVERY RECTIFIER
Green Products

Features
l

l
l
l
l
Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
Green Products in Compliance with the RoHS Directive
A
B
A
Mechanical Data
l
l
l
l
l
l
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 0.34 grams (approx.)
Mounting Position: Any
Marking: Type Number
D
DO-41
Max
C
Dim
A
B
C
D
Min
Min
Max
25.4
4.06 5.21
0.71 0.864
2.00 2.72
In mm
1.000
0.159 0.205
0.028 0.034
0.079 0.107
In inch
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 55°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Max. Forward Voltage
@I
F
= 1.0A
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
UF
UF
UF
UF
4001-G 4002-G 4003-G 4004-G
50
35
100
70
200
140
400
280
1.0
UF
UF
UF
4005-G 4006-G 4007-G
600
420
800
560
1000
700
Unit
V
V
A
I
FSM
V
FM
I
RM
t
rr
C
j
R
ΘJA
R
ΘJL
T
j
T
STG
50
20
1.0
30
1.3
5.0
100
75
10
60
15
-55 to +125
-55 to +150
1.7
A
V
µA
nS
pF
°C/W
°C/W
°C
°C
Peak Reverse Current
@T
A
= 25°C
At Rated DC Blocking Voltage @T
A
= 100°C
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 3)
Typical Thermal Resistance, Junction to Ambient
Typical Thermal Resistance, Junction to Lead at
L= 0.375” (9.53mm)
Operating Temperature Range
Storage Temperature Range
*Glass passivated forms are available upon request
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured with IF = 0.5A, IR = 1.0A, IRR = 0.25A. See figure 1.
3. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
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