EEWORLDEEWORLDEEWORLD

Part Number

Search

GF1A

Description
1 A, 50 V, SILICON, SIGNAL DIODE, DO-214BA
Categorysemiconductor    Discrete semiconductor   
File Size4MB,2 Pages
ManufacturerTAYCHIPST
Websitehttp://www.taychipst.com
Download Datasheet Parametric Compare View All

GF1A Online Shopping

Suppliers Part Number Price MOQ In stock  
GF1A - - View Buy Now

GF1A Overview

1 A, 50 V, SILICON, SIGNAL DIODE, DO-214BA

GF1A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, GF1, 2 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time2 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current1 A
GF1A THRU GF1M
SURFACE MOUNT GLASS PASSIVATED JUNCTION RECTIFIER
FEATURES
50V-1000V 1.0A
l
l
l
l
l
l
l
l
l
Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
Ideal for surface mount automotive applications
High temperature metallurgically bonded construction
Glass passivated cavity-free junction
High temperature soldering guaranteed: 450°C/5 seconds
at terminals
Complete device submersible temperature of 265°C for
10 seconds in solder bath
MECHANICAL DATA
Case:
JEDEC DO-214BA molded plastic over glass body
Terminals:
Solder plated, solderable per MIL-STD-750,
Method 2026
Polarity:
Color band denotes cathode end
Mounting Position:
Any
Weight:
0.0048 ounces, 0.120 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
GF1A
GA
GF1B
GB
GF1D
GD
GF1G
GG
GF1J
GJ
GF1K
GK
GF1M
GM
UNITS
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=125°C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
at rated DC blocking voltage
Typical reverse recovery time
(NOTE 1)
Typical junction capacitance
(NOTE 2)
Typical thermal resistance
(NOTE 3)
Operating junction and storage temperature range
T
A
=25°C
T
A
=125°C
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
Volts
Volts
Volts
Amp
I
FSM
V
F
I
R
t
rr
C
J
R
ΘJA
R
ΘJL
T
J
, T
STG
30.0
1.10
5.0
50.0
2.0
15.0
80.0
26.0
-65 to +175
1.20
Amps
Volts
µA
µs
pF
°C/W
°C
NOTES:
(1) Reverse recovery test conditions: I
F
=0.5A, I
R
=1.0A, I
rr
=0.25A
(2) Measured at 1.0 MHz and applied V
R
=4.0 Volts
(3) Thermal resistance from junction to ambient and from junction to lead
P.C.B. mounted on 0.2 x 0.2” (5.0 x 5.0mm) copper pad areas
E-mail: sales@taychipst.com
1 of 2
Web Site: www.taychipst.com

GF1A Related Products

GF1A GF1B GF1D GF1G GF1J GF1K GF1M
Description 1 A, 50 V, SILICON, SIGNAL DIODE, DO-214BA SIGNAL DIODE 1 A, 200 V, SILICON, SIGNAL DIODE, DO-214BA 1 A, SILICON, SIGNAL DIODE, DO-214BA 1 A, 600 V, SILICON, SIGNAL DIODE, DO-214BA 1 A, SILICON, SIGNAL DIODE, DO-214BA 1 A, 1000 V, SILICON, SIGNAL DIODE, DO-214BA

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 18  533  736  1059  309  1  11  15  22  7 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号